高介电常数介质场电镀垂直（001）$β$ $_2$ O PDMATHAAC肖特基势垒二极管，表面击穿电场为5.45 MV/cm，BFOM为$>$ 1 GW/cm $^{2}$
High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$
摘要：
本文介绍了一种新型极介电常数场氧化层的垂直（001）取向$β$-Ga PDMATHABMNOPDMATHABMO场镀（FP）肖特基势垒二极管（SBD）。使用1.7 μ $μm$的薄漂移层来实现穿通（PT）场分布和0.32 μ $Ω$ -cm $^{2}$的非常低的微分比导通电阻（R $_{on-sp}$）。极端介电常数场板氧化物促进了场板边缘之外的电场分布的横向扩展，并且实现了687 V的击穿电压（$V_{br}$）。边缘终端效率从非场板结构的13.5 $\%$增加到高介电常数场板结构的63 $\%$。使用TCAD模拟在阳极区域的中心处提取表面击穿电场为5.45 MV/cm。高介电常数场镀SBD展示了1.47 GW/cm $^{2}$的创纪录的高巴利加品质因数（BFOM），显示了Ga $_2$ 0 $_3$功率器件用于多千伏级应用的潜力。
英文摘要：
This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm$^{2}$ showing the potential of Ga$_2$O$_3$ power devices for multi-kilovolt class applications.
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