arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2104.13637cond-mat.str-el
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Stacking faults in $α$-RuCl$_3$ revealed by local electric polarization

Xinrun Mi, Xiao Wang, Hengrui Gui, Maochai Pi, Tingting Zheng, Kunya Yang, Yuhan Gan, Peipei Wang, Alei Li, Aifeng Wang, Liyuan Zhang, Yixi Su, Yisheng Chai, Mingquan He

英文摘要:

We present out-of-plane dielectric and magnetodielectric measurements of single crystallines $α$-RuCl$_3$ with various degrees of stack faults. A frequency dependent, but field independent, dielectric anomaly appears at $T_{A}\:(f=100\:\mathrm{kHz})\sim$ 4 K once both magnetic transitions at $T_{N1}\sim$ 7 K and $T_{N2}\sim$ 14 K set in. The observed dielectric anomaly is attributed to the emergency of possible local electric polarizations whose inversion symmetry is broken by inhomogeneously distributed stacking faults. A field-induced intermediate phase is only observed when a magnetic field is applied perpendicular to the Ru-Ru bonds for samples with minimal stacking faults. Less pronounced in-plane anisotropy is found in samples with sizable contribution from stacking imperfections. Our findings suggest that dielectric measurement is a sensitive probe in detecting the structural and magnetic properties, which may be a promising tool especially in studying $α$-RuCl$_3$ thin film devices. Moreover, the stacking details of RuCl$_3$ layers strongly affect the ground state both in the magnetic and electric channels. Such a fragile ground state against stacking faults needs to be overcome for realistic applications utilizing the magnetic and/or electric properties of Kitaev based physics in $α$-RuCl$_3$.

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