电负性金属掺杂剂改善了Al2O3电阻开关器件中的开关一致性
Electronegative metal dopants improve switching consistency in Al2O3 resistive switching devices
摘要：
电阻式随机存取存储器对于非易失性存储器和脑启发计算应用是有希望的。这些设备的高可变性和低产量是阻碍物理神经网络可靠训练的关键缺点。在这项研究中，我们表明，掺杂的氧化物电解质，氧化铝，与电负性金属，使电阻开关显着更重现性，超过了获得可靠的硬件神经形态电路的再现性要求。潜在的机制是在电负性掺杂剂附近容易产生氧空位，这是由于掺杂剂中间带隙态捕获了相关电子，并且削弱了Al-O键。这些氧空位和空位簇也显著地结合到掺杂剂，从而在形成导电路径中充当优先位点和构建块。我们通过在电负性范围内注入多种掺杂剂来验证这一理论，并发现具有高度电负性的金属Au，Pt和Pd具有优异的可重复性和产量。这些器件还表现出一个渐进的SET转换，使多位开关，这是模拟计算所需要的。
英文摘要：
Resistive random access memories are promising for non-volatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this study, we show that doping an oxide electrolyte, Al2O3, with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. The underlying mechanism is the ease of creating oxygen vacancies in the vicinity of electronegative dopants, due to the capture of the associated electrons by dopant mid-gap states, and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. We validate this theory experimentally by implanting multiple dopants over a range of electronegativities, and find superior repeatability and yield with highly electronegative metals, Au, Pt and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.
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