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arXiv 2104.09822cond-mat.supr-con
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具有Mo2C正方形网格的ThMo2Si2C的超导电性

Superconductivity in ThMo2Si2C with Mo2C Square Net

Zichen Liu, Baizhuo Li, Yusen Xiao, Qingchen Duan, Yanwei Cui, YuXue Mei, Qian Tao, Shuli Wei, Shugang Tan, Qiang Jing, Qing Lu, Yuping Sun, Yunyan Liu, Shenggu… 展开作者

Zichen Liu, Baizhuo Li, Yusen Xiao, Qingchen Duan, Yanwei Cui, YuXue Mei, Qian Tao, Shuli Wei, Shugang Tan, Qiang Jing, Qing Lu, Yuping Sun, Yunyan Liu, Shenggui Fu, Hao Jiang, Zhi Ren, Zhu'an Xu, Cao Wang, Guanghan Cao

摘要:

本文报道了用电弧熔炼法合成的一种新的四元化合物ThMo $_2$ Si $_2$ C的超导电性。该化合物以四元CeCr $_2$ Si $_2$ C型结构结晶,晶胞参数为$a$ = 4.2296 μ m和$c$ = 5.3571 μ m。原子间距表明层间存在Si-Si共价键。电阻率和磁化率的测量表明,在正常状态下的电子-电子散射占主导地位的保利顺磁金属。体超导性在2.2 K的无量纲比热跃变的$ΔC/γ_{\rm n}T$ = 0.98证明。给出了临界磁场、相干长度、穿透深度和超导能隙等超导参数。

英文摘要:

We report the superconductivity of a new quaternary compound ThMo$_2$Si$_2$C, synthesized with the arc-melting technique. The compound crystallizes in a tetragonal CeCr$_2$Si$_2$C-type structure with cell parameters of $a$ = 4.2296 Åand $c$ = 5.3571 Å. An interlayer Si-Si covalent bonding is suggested by the atomic distance. The electrical resistivity and magnetic susceptibility measurements indicate a Pauli-paramagnetic metal with dominant electron-electron scattering in the normal-state. Bulk superconductivity at 2.2 K is demonstrated with a dimensionless specific-heat jump of $ΔC/γ_{\rm n}T$ = 0.98. The superconducting parameters of the critical magnetic fields, coherence length, penetration depth, and superconducting energy gap are given.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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