回复“关于Phi忆阻器的评论：发现真实忆阻器”，arXiv：1909.12464
Reply to "Comment on Phi memristor: Real memristor found", arXiv:1909.12464
摘要：
在这个回复中，我们将对arXiv：1909.12464中的主要批评（粗体和下划线）提供客观的、点对点的回应。首先，我们将在评论中识别一些（难以察觉的隐藏）错误，以理解/解释我们的物理模型。其次，我们将使用1961年进行的第三方实验（以及此后的其他第三方实验）来进一步支持我们的主张，即我们发明的Φ忆阻器是忆阻的，尽管存在寄生电感效应。第三，我们将从数学上分析这种寄生效应，介绍我们正在进行的工作（纳米级），并指出这种寄生电感效应不应该成为一个大问题，因为它可以在宏观尺度的设备中完全消除，并安全地忽略纳米尺度的设备。
英文摘要：
In this reply, we will provide our impersonal, point-to-point responses to the major criticisms (in bold and underlined) in arXiv:1909.12464. Firstly, we will identify a number of (imperceptibly hidden) mistakes in the Comment in understanding/interpreting our physical model. Secondly, we will use a 3rd-party experiment carried out in 1961 (plus other 3rd-party experiments thereafter) to further support our claim that our invented Phi memristor is memristive in spite of the existence of a parasitic inductor effect. Thirdly, we will analyse this parasitic effect mathematically, introduce our work-in-progress (in nanoscale) and point out that this parasitic inductor effect should not become a big worry since it can be completely removed in the macro-scale devices and safely neglected in the nano-scale devices.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
