基于BSIM和EKV模型的MOSFET装置低温建模
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
摘要：
扭结效应是反型体硅MOSFET器件低温模型的一大障碍。本文采用了两种方法来校正扭结效应：改进的进化策略（MES）和双模型建模（BSIM3v3和EKV2.6）。这两种方法都是基于扭结效应的原理。第一种方法考虑了碰撞电离和衬底电流感生体效应（SCBE），第二种方法考虑了冻结衬底电势的变化。应用上述两种方法，可以对扭折进行修正，提高仿真数据与测量数据的一致性，获得更准确的模型参数。这两种方法可用于进一步的低温器件建模和电路设计。
英文摘要：
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evolutionary strategy (MES) and dual-model modeling (BSIM3v3 and EKV2.6). Both methods are based on the principle of kink effect. The first method considers impact ionization and substrate current induced body effect (SCBE), and the other considers the change of the freeze-out substrate potential. By applying the above two methods, kink can be corrected to improve the agreement between simulation data and measurement data, and obtain more accurate model parameters. These two methods can be used in further work for cryogenic device modeling and circuit design.
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