通过费米能级调控优化基于二维材料的场效应晶体管的稳定性
Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
AI总结：
本文提出通过调控沟道费米能级使其远离绝缘体缺陷带，在不改变陷阱总数的情况下减少电活性边界陷阱，从而显著降低二维材料FET的迟滞并提升可靠性，并通过不同掺杂石墨烯/Al$_2$O$_3$器件实验验证了该方法的有效性。
摘要：
尽管在过去十年中取得了巨大进展，基于二维（2D）半导体的纳米电子器件仍然面临有限的电学稳定性问题。研究表明，这种有限的稳定性源于来自二维半导体的电荷载流子与周围绝缘材料中缺陷的相互作用。由此产生的动态俘获电荷在场效应晶体管（FET）中尤为关键，可导致较大的迟滞现象，从而危及电路的稳定运行。基于电荷俘获对沟道费米能级与绝缘体中缺陷带之间能量对齐高度敏感这一认识，我们提出通过有意调控沟道费米能级来优化器件稳定性。我们的方法旨在在不改变绝缘体中陷阱总数的情况下，最小化电活性边界陷阱的数量。我们通过在柔性衬底上以Al$_2$O$_3$作为栅氧化层的其他方面完全相同的FET中使用两种不同掺杂的石墨烯层，证明了这一思路的适用性。我们的结果清楚地表明，通过增大费米能级与缺陷带之间的距离，迟滞现象显著减小。此外，由于长期可靠性对俘获电荷也非常敏感，因此理论上预期可靠性会相应提高，并通过实验得到了证实。我们的研究为构建更稳定、更可靠的二维FET铺平了道路，在这种器件中，沟道材料经过精心选择和调控，以最大化沟道中电荷载流子与所用绝缘体中缺陷带之间的能量距离。
英文摘要：
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped charges are particularly relevant in field effect transistors (FETs) and can lead to a large hysteresis, which endangers stable circuit operation. Based on the notion that charge trapping is highly sensitive to the energetic alignment of the channel Fermi-level with the defect band in the insulator, we propose to optimize device stability by deliberately tuning the channel Fermi-level. Our approach aims to minimize the amount of electrically active border traps without modifying the total number of traps in the insulator. We demonstrate the applicability of this idea by using two differently doped graphene layers in otherwise identical FETs with Al$_2$O$_3$ as a gate oxide mounted on a flexible substrate. Our results clearly show that by increasing the distance of the Fermi-level to the defect band, the hysteresis is significantly reduced. Furthermore, since long-term reliability is also very sensitive to trapped charges, a corresponding improvement in reliability is both expected theoretically and demonstrated experimentally. Our study paves the way for the construction of more stable and reliable 2D FETs in which the channel material is carefully chosen and tuned to maximize the energetic distance between charge carriers in the channel and the defect bands in the insulator employed.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
