Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide $\mathrm{Fe_{1/3}NbS_2}$ have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering temperature, making $\mathrm{Fe_{1/3}NbS_2}$ promising for spintronics applications. Here, we perform density functional theory calculations with Hubbard U corrections of the magnetic order, electronic structure, and transport properties of crystalline $\mathrm{Fe_{1/3}NbS_2}$, clarifying the origin of the different resistance states. The two experimentally proposed antiferromagnetic ground states, corresponding to in-plane stripe and zigzag ordering, are computed to be nearly degenerate. In-plane cross sections of the calculated Fermi surfaces are anisotropic for both magnetic orderings, with the degree of anisotropy sensitive to the Hubbard U value. The in-plane resistance, computed within the Kubo linear response formalism using a constant relaxation time approximation, is also anisotropic, supporting a hypothesis that the current-induced resistance changes are due to a repopulating of AFM domains. Our calculations indicate that the transport anisotropy of $\mathrm{Fe_{1/3}NbS_2}$ in the zigzag phase is reduced relative to stripe, consistent with the relative magnitudes of resistivity changes in experiment. Finally, our calculations reveal the likely directionality of the current-domain response, specifically, which domains are energetically stabilized for a given current direction.
Metallic d-wave altermagnetism in WFeB: a platform for electrically switchable perpendicular spin-splitter response
Iowa State University（爱荷华州立大学）；Ames National Laboratory, U.S. Department of Energy（美国能源部阿姆斯国家实验室）；University of Nebraska-Lincoln（内布拉斯加大学林肯分校）；Nebraska Center for Materials and Nanoscience（内布拉斯加材料纳米科学中心）；Oak Ridge National Laboratory（橡树岭国家实验室）；Middle Tennessee State University（中田纳西州立大学）；University of Tennessee Space Institute（田纳西大学太空研究所）
Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calcul…
Hidden spin polarization (HSP) emerges in centrosymmetric crystals where visible spin splittings in the real space can be observed because of the lack of inversion symmetry in each local sector. Starting from tight-binding models, we introduce nonsymmorphic antiferroelectric (AFE) crystals as a new class of functional materials that can exhibit strong local spin polarization. Such AFE crystals can be basically classified as in-plane and out-of-plane AFE configurations, and can be reversibly switched to the ferroelectric phase by an electric field to manifest global spin splittings, enabling a …
Realizing topological magnetism and its electric control are intensive topics in the spintronics due to their promising applications in information storage and logic technologies. Here we unveil that both can be achieved in the two-dimensional (2D) magnetoelectric multiferroics. Using first-principles calculations, we show that strong Dzyaloshinskii-Moriya interaction (DMI), which is the key ingredient for the formation of exotic chiral magnetism, could be induced in 2D multiferroics with vertical electric polarization via Rashba effect. We verify that such significant DMI can promote sub-10 n…
Metamaterials bring sub-wavelength resonating structures together to overcome the limitations of conventional materials. The realization of active metadevices has been an outstanding challenge that requires electrically reconfigurable components operating over a broad spectrum with a wide dynamic range. The existing capability of metamaterials, however, is not sufficient to realize this goal. Here, by integrating passive metamaterials with active graphene devices, we demonstrate a new class of electrically controlled active metadevices working in microwave frequencies. The fabricated active me…
We perform high-field magnetization measurements on the triangular lattice antiferromagnet Fe$_{1/3}$NbS$_2$. We observe a plateau in the magnetization centered at approximately half the saturation magnetization over a wide range of temperature and magnetic field. From density functional theory calculations, we determine a likely set of magnetic exchange constants. Incorporating these constants into a minimal Hamiltonian model of our material, we find that the plateau and of the $Z_3$ symmetry breaking ground state both arise from interplane and intraplane antiferromagnetic interactions acting…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and valve devices through band engineering. Instead of the magnetic proximity effect that has been extensively used in previous studies, in our strategy, the electron valleys are directly coupled to the spin-polarized states of the two-dimensional ferromagnets. We find that this coupling results in a valley-selective gap opening due to the spin-momentum locking…
Van der Waals magnets have emerged as a fertile ground for the exploration of highly tunable spin physics and spin-related technology. Two-dimensional (2D) magnons in van der Waals magnets are collective excitation of spins under strong confinement. Although considerable progress has been made in understanding 2D magnons, a crucial magnon device called the van der Waals magnon valve, in which the magnon signal can be completely and repeatedly turned on and off electrically, has yet to be realized. Here we demonstrate such magnon valves based on van der Waals antiferromagnetic insulator MnPS3. …
Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc…
Antiferromagnets are robust to external electric and magnetic fields, and hence are seemingly uncontrollable. Recent studies, however, realized the electrical manipulations of antiferromagnets by virtue of the antiferromagnetic Edelstein effect. We present a general symmetry analysis of electrically switchable antiferromagnets based on group-theoretical approaches. Furthermore, we identify a direct relation between switchable antiferromagnets and the ferrotoroidic order. The concept of the ferrotoroidic order clarifies the unidirectional nature of switchable antiferromagnets and provides a cri…
Stoichiometry-Controlled Structural Order and Tunable Antiferromagnetism in $\mathrm{Fe}_{x}\mathrm{NbSe_2}$ ($0.05 \le x \le 0.38$)
Tsung-Dao Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院李政道研究所）；Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology（南方科技大学量子科学与工程研究院）；International Quantum Academy（国际量子科学院）；Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University（上海交通大学张江高等研究院）；State Key Laboratory of Micro-nano Engineering Science, Shanghai Jiao Tong University（上海交通大学微纳制造技术国家重点实验室）
Electric-Switchable Chiral Magnons in PT-Symmetric Antiferromagnets
Ministry of Education Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Advanced Functional Materials and Mesoscopic Physics, School of Physics, Xi’an Jiaotong University（西安交通大学物理学院）；Division of Physics and Applied Physics, School of Physics and Mathematical Sciences, Nanyang Technological University（南洋理工大学物理与数学科学学院）；Department of Physics, University of Science and Technology of China（中国科学技术大学物理系）；Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University（华南师范大学物理学院）
Altermagnets Enable Gate-Switchable Helical and Chiral Topological Transport with Spin-Valley-Momentum-Locked Dual Protection
Eastern Institute of Technology（东方理工大学）；University of Science and Technology of China（中国科学技术大学）；Suzhou University of Science and Technology（苏州科技大学）；University at Buffalo, State University of New York（纽约州立大学布法罗分校）
