单光子探测器用非晶硅化钼薄膜的物理特性
Physical properties of amorphous molybdenum silicide films for single photon detectors
摘要：
系统研究了磁控共溅射法制备的非晶Mo $_{\rm x}$ Si $_{1-x}$薄膜的物理性质。$_{\rm x}$薄膜的临界温度$_{1-x}$随化学计量比x的增加而逐渐增加，在$_{\rm 0.83}$ Si-$_{0.17}$中达到最高，为7.9 K。超过$x$ =0.83，预制的库珀对和超导畴坚持在薄膜中，尽管超导状态与完美的零电阻率是缺席。Mo $_{\rm 0.83}$ Si $_{0.17}$的厚膜显示出令人惊讶的退化，其中零电阻率的开始被抑制在低于2 K。然而，薄Mo $_{\rm 0.83}$ Si $_{0.17}$膜即使在厚度d $\leq$ 1 nm时也显示出稳健的超导性。我们还表征了基于2 nm薄Mo $_{\rm 0.8}$ Si $_{0.2}$膜的宽微线，其宽度为40和60 $μ$ m，在780 nm和1550 nm波长处显示出单光子灵敏度
英文摘要：
We systematically investigated the physical properties of amorphous Mo$_{\rm x}$Si$_{1-x}$ films deposited by the magnetron co-sputtering technique. The critical temperature $T_C$ of Mo$_{\rm x}$ Si$_{1-x}$ films increases gradually with the stoichiometry x, and the highest $T_C$=7.9 K was found in Mo$_{\rm 0.83}$ Si$_{0.17}$. Beyond $x$=0.83, preformed Cooper pairs and superconducting domains persist in the films, despite the superconducting state with perfect zero-resistivity is absent. The thick films of Mo$_{\rm 0.83}$ Si$_{0.17}$ show surprising degradation in which the onset of zero-resistivity is suppressed below 2 K. The thin Mo$_{\rm 0.83}$ Si$_{0.17}$ films, however, reveal robust superconductivity even with thickness d$\leq$1 nm. We also characterized wide microwires based on the 2 nm thin Mo$_{\rm 0.8}$ Si$_{0.2}$ films with widths 40 and 60 $μ$m, which show single-photon sensitivity at 780 nm and 1550 nm wavelength
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