在Ge上生长的具有减少的裂纹的减薄的GaInP/GaInAs/Ge太阳能电池|Si虚拟衬底
Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates
摘要：
减少Ge衬底上GaInP/GaInAs/Ge三结太阳电池生长过程中裂纹的形成|Si虚拟衬底已尝试通过减薄的结构，即Ge底部电池和GaInAs中间电池。使用现实的设备参数进行的理论分析表明，GaInAs中间电池可以大幅减薄到1000 nm，同时增加其In含量到8%，在3结电池的效率损失低于3%。实验结果表明，在减薄的GaInAs/Ge 2结和GaInP/GaInAs/Ge 3结电池中，宏观裂纹的形成得到了抑制。这些原型无裂纹多结电池演示了概念，并用于排除任何可能的组件集成问题。性能指标受到所使用虚拟衬底中超过2 e7 cm-2的高穿透位错密度的限制，但展示了几乎电流匹配、无裂纹、减薄的3结太阳能电池，并确定了通往更高电压太阳能电池的途径。
英文摘要：
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performed using realistic device parameters indicates that the GaInAs middle cell can be drastically thinned to 1000 nm while increasing its In content to 8% with an efficiency loss in the 3-junction cell below 3%. The experimental results show that the formation of macroscopic cracks is prevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells. These prototype crack-free multijunction cells demonstrate the concept and were used to rule out any possible component integration issue. The performance metrics are limited by the high threading dislocation density over 2e7cm-2 in the virtual substrates used, but an almost current matched, crack-free, thinned 3-junction solar cell is demonstrated, and the pathway towards solar cells with higher voltages identified.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
