BaBiO $_{3}$中厚度相关的带隙变化
Thickness-Dependent Band Gap Modification in BaBiO$_{3}$
摘要：
材料BaBiO $_{3}$以其绝缘特性而闻名。然而，对于薄膜，在超薄极限下，金属性是预期的，因为BaBiO $_{3}$被建议返回到其未畸变的立方相，其中氧八面体呼吸模式将被抑制，如最近报道的。在这里，我们确认的氧气呼吸模式上的带隙的大小的影响。用\textit{in-situ}扫描隧道显微镜研究了BaBiO $_{3}$厚度系列的电子性质。我们观察到宽禁带（$E_\textrm{G}$ ~ $>$ 1.2 V）到小禁带~（$E_\textrm{G}$ ~ $\approx$ 0.07 eV）半导体跃迁随BaBiO $_{3}$膜厚度的减小而变化。然而，即使对于超薄BaBiO $_{3}$膜，也不存在金属态。的带隙大小的依赖性被发现是符合作为厚度的函数的呼吸声子模式的拉曼响应的强度。
英文摘要：
The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra breathing mode will be suppresse as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO$_{3}$ thickness series are studied using \textit{in-situ} scanning tunneling microscopy. We observe a wide-gap ($E_\textrm{G}$~$>$ 1.2 V) to small-gap~($E_\textrm{G}$~$\approx$ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO$_{3}$ film thickness. However, even for an ultra-thin BaBiO$_{3}$ film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
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