掺杂碳纳米管中激发态的扩散型与单分子型非辐射衰减
Diffusive and Unimolecular Nonradiative Decay of Excited States in Doped Carbon Nanotubes
AI总结：
该研究探究掺杂对单壁碳纳米管激发态非辐射衰减的影响，发现激子衰减为扩散限制型、三激子为单分子型，揭示了带电杂质在能量耗散中的双重作用。
摘要：
掺杂可深刻改变半导体的电子结构与光学结构。本文研究了过剩电荷对掺杂半导体单壁碳纳米管中非辐射（NR）激子与三激子衰减的影响。激子光致发光量子产率及激子衰减随掺杂水平的变化（具有特征性的拉伸指数动力学），被归因于带电杂质位点处的扩散限制型非辐射衰减。相比之下，三激子衰减为单分子过程，速率常数为$2.0\text{ ps}^{-1}$。实验表明，带电杂质不仅能捕获三激子、清除可移动激子，还能促进二者的高效非辐射能量耗散。
英文摘要：
Doping can profoundly affect the electronic- and optical-structure of semiconductors. Here we address the effect of surplus charges on non-radiative (NR) exciton and trion decay in doped semiconducting single-wall carbon nanotubes. The dependence of exciton photoluminescence quantum yields and exciton decay on the doping level, with its characteristically stretched-exponential kinetics, is attributed to diffusion-limited NR decay at charged impurity sites. By contrast, trion decay is unimolecular with a rate constant of $2.0\,\rm ps^{-1}$. Our experiments thus show that charged impurities not only trap trions and scavenge mobile excitons but that they also facilitate efficient NR energy dissipation for both.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
