arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2103.13938cond-mat.mes-hall
收藏

用于混合量子器件的双纳米线

Double nanowires for hybrid quantum devices

Thomas Kanne, Dags Olsteins, Mikelis Marnauza, Alexandros Vekris, Juan Carlos Estrada Saldana, Sara Loric, Rasmus D. Schlosser, Daniel Ross, Szabolcs Csonka, Ka… 展开作者

Thomas Kanne, Dags Olsteins, Mikelis Marnauza, Alexandros Vekris, Juan Carlos Estrada Saldana, Sara Loric, Rasmus D. Schlosser, Daniel Ross, Szabolcs Csonka, Kasper Grove-Rasmussen, Jesper Nygård

摘要:

由超导带连接的平行一维半导体通道构成了最近几个量子器件提案中的核心平台,这些提案依赖于例如Andreev过程或拓扑效应。为了实现这些建议,实际的材料系统必须具有高的晶体纯度,并且不同元素之间的耦合应该在它们的界面和几何形状方面是可控的。我们提出了一种利用III-V族分子束外延通过气-液-固机制合成双InAs纳米线的策略。在不破坏真空的情况下将超导层沉积到纳米线上,确保超导体和两个半导体纳米线之间的原始界面。该方法允许高产量的合并以及单独的平行纳米线,具有全壳或半壳超导体涂层。我们通过电子输运测量证明了它们在复杂量子器件中的实用性。

英文摘要:

Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of their interfaces and geometry. We present a strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy. A superconducting layer is deposited onto nanowires without breaking vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires, with full or half-shell superconductor coatings. We demonstrate their utility in complex quantum devices by electron transport measurements.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑