克服GaAs上>1.3 $μ$ m变质激光器MOVPE表面演化不稳定性的重要性
The importance of overcoming MOVPE surface evolution instabilities for >1.3 $μ$m metamorphic lasers on GaAs
摘要：
我们研究和证明了1.3 $μ$ m波段激光器生长的金属有机物气相外延（MOVPE）上的一个特别设计的变质抛物线渐变的在$_x$镓$_{1-x}$作为缓冲和外延结构的GaAs衬底。底部和上部包覆层被构建为超晶格序列中的AlInGaAs和InGaP合金的组合。这是为了克服（以前未报道）有害的表面外延动力学和不稳定性：当单一合金被用来实现厚层的变质结构，表面不稳定性诱导缺陷的产生。这代表了MOVPE变形激光器的历史限制因素。我们描述了一些替代策略，以实现光滑的表面形态，以获得有效的压缩应变在$_{0.4}$镓$_{0.6}$作为量子阱中的有源层。对于500 $μ$ m长的脊形波导器件，所得激光器表现出低的激射阈值，总斜率效率为0.34 W/A。发射波长延伸至1360 nm。
英文摘要：
We investigated and demonstrated a 1.3 $μ$m-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded In$_x$Ga$_{1-x}$As buffer and epitaxial structure on a GaAs substrate. Bottom and upper cladding layers were built as a combination of AlInGaAs and InGaP alloys in a superlattice sequence. This was implemented to overcome (previously unreported) detrimental surface epitaxial dynamics and instabilities: when single alloys are utilised to achieve thick layers on metamorphic structures, surface instabilities induce defect generation. This has represented a historically limiting factor for metamorphic lasers by MOVPE. We describe a number of alternative strategies to achieve smooth surface morphology to obtain efficient compressively strained In$_{0.4}$Ga$_{0.6}$As quantum wells in the active layer. The resulting lasers exhibited low lasing threshold with total slope efficiency of 0.34 W/A for a 500 $μ$m long ridge waveguide device. The emission wavelength is extended as far as 1360 nm.
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