一种基于石墨烯场效应管的高频抗扰移相器
A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
摘要：
我们提出了一种基于石墨烯的移相器的射频（RF）相控阵应用。所设计的相移系统的核心由共源极放大器配置中使用的石墨烯场效应晶体管（GFET）组成。通过利用石墨烯的量子电容及其对终端晶体管偏置的依赖性来控制RF信号的相位。特别是，通过独立地调谐所施加的栅极到源极和漏极到源极偏置，我们观察到，在超高频带中，信号的相位可以在2.5 dB的恒定增益下变化近200度。另外，如果仅栅极偏置被用作控制信号，并且漏极根据前者被线性偏置（即，在完全模拟操作中），仅使用一个晶体管就可以实现85度的相移，并且保持0dB的增益，最大变化为1.3dB。后一种设计可以通过应用平衡的分支线配置来改进，该配置显示出与其他最先进的移相器相比具有竞争力。这项工作为石墨烯技术的开发铺平了道路，成为高频工作的有源模拟移相器的核心。
英文摘要：
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier configuration. The phase of the RF signal is controlled by exploiting the quantum capacitance of graphene and its dependence on the terminal transistor biases. In particular, by independently tuning the applied gate-to-source and drain-to-source biases, we observe that the phase of the signal, in the super-high frequency band, can be varied nearly 200 degrees with a constant gain of 2.5 dB. Additionally, if only the gate bias is used as control signal, and the drain is biased linearly dependent on the former (i.e., in a completely analogue operation), a phase shift of 85 degrees can be achieved making use of just one transistor and keeping a gain of 0 dB with a maximum variation of 1.3 dB. The latter design can be improved by applying a balanced branch-line configuration showing to be competitive against other state-of-the-art phase shifters. This work paves the way towards the exploitation of graphene technology to become the core of active analogue phase shifters for high-frequency operation.
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