用于低压场发射电子源的直接在商业上可获得的2.5D衬底上生长的高电流CNT膜
High-current CNT films grown directly on commercially available 2.5D substrates for low-voltage field-emission electron sources
摘要：
碳纳米管（CNT）基电子器件在超硅固态电子学和真空微纳电子学领域具有广阔的应用前景。尽管CNT场效应晶体管相关的固态电子学取得了快速进展，但基于CNT的真空纳米电子器件的发展基本上受到要求在低工作电压下的高电流场发射（FE）电子源的长期挑战的阻碍。除了碳纳米管本身的性质外，场发射特性还受到衬底形貌和界面状态的影响。这项工作表明，在相对较低的工作电压下，通过使用直接在市售的2.5D基板上生长的CNT膜，具有匹配的特征尺寸和改善的界面接触的高电流FE特性。模拟结果表明，市售的2.5D基板，包括镍泡沫（NiF）和碳布（CC）与适当的特征尺寸将显着地有助于提高发射电流在一个相对较低的电压。改进的制造工艺导致CNT和下面的2.5D衬底之间的接触改善。通过在随机挑选的NiF上直接生长的CNT实现的二十倍更高的发射电流密度和减半的较低的开启电场显示了具有良好接触的2.5D衬底在改善FE特性方面的潜力。最后，高发射电流（6 mA）与约75%的开启电场下降实现匹配的特征尺寸的2.5维基板与碳纳米管，使我们显着接近可靠的高电流和低电压FE电子源的实际应用。
英文摘要：
Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the development of CNT-based vacuum nanoelectronic devices is substantially blocked by the longstanding challenges in demanding high-current field-emission (FE) electron sources at low operating voltage. In addition to CNTs' properties, FE characteristics are also affected by substrate morphology and interface state. This work demonstrates high-current FE characteristics at relatively low operating voltage by using CNT films grown directly on commercially available 2.5D substrates with matched feature size and improved interface contact. Simulation results indicate that the commercially available 2.5D substrate including nickel foam (NiF) and carbon cloth (CC) with appropriate feature size would dramatically help to enhance emission current at a relatively lower voltage. Modified fabrication process results in improved contact between CNTs and the underlying 2.5D substrates. Twenty times higher emission current density with halved lower turn-on electric field achieved by CNTs grown directly on randomly picked NiF shows the potential of 2.5D substrate with good contact in improving FE characteristics. Finally, a high emission current (6 mA) with approximately 75 percent decrease in turn-on electric field was realized by matching the feature size of 2.5D substrate with that of CNTs, bringing us significantly closer to reliable high-current and low-voltage FE electron sources for practical applications.
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