利用分数阶电容器件的记忆效应实现信息编解码
Information Encoding/Decoding using the Memory Effect in Fractional-order Capacitive Devices
摘要：
在这项研究中，我们表明，从相同的初始稳态电压到一个恒定的电阻器的分数阶超级电容器的放电电压模式是依赖于过去的充电电压分布。充电电压被设计为遵循幂律函数，即$v_c(t)=V_{cc} \left( {t}/{t_{ss}}\right)^p \;(0<t \leqslant t_{ss})$，其中$t_{ss}$（零电压到端电压$V_{cc}$之间的充电持续时间）和$p$（$0<p<1$）充当两个可变参数。我们使用设备的动态行为的这种历史依赖性来唯一地检索在充电波形模式中预编码的信息。此外，我们提供了一个分析模型的基础上分数微积分，解释唯象的信息存储机制。利用这种内在的材料记忆效应可能会导致信息存储和检索的新方法。
英文摘要：
In this study, we show that the discharge voltage pattern of a fractional-order supercapacitor from the same initial steady-state voltage into a constant resistor is dependent on the past charging voltage profile. The charging voltage was designed to follow a power-law function, i.e. $v_c(t)=V_{cc} \left( {t}/{t_{ss}}\right)^p \;(0<t \leqslant t_{ss})$, in which $t_{ss}$ (charging time duration between zero voltage to the terminal voltage $V_{cc}$) and $p$ ($0<p<1$) act as two variable parameters. We used this history-dependence of the dynamic behavior of the device to uniquely retrieve information pre-coded in the charging waveform pattern. Furthermore, we provide an analytical model based on fractional calculus that explains phenomenologically the information storage mechanism. The use of this intrinsic material memory effect may lead to new types of methods for information storage and retrieval.
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