Sb2Te3/GeTe超晶格薄膜的热、电性质研究
Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films
摘要：
类超晶格相变存储器（SL-PCM）具有比传统的基于Ge_2Sb_2Te_5（GST）的相变存储器更低的开关电流。然而，SL-PCM的基本理解需要这样的SL内的接口的详细表征。在这里，我们探讨的电和热输运的SL与沉积的Sb 2 Te 3和GeTe交替层的各种厚度。我们发现，由于SL内的热界面电阻，与多晶GST（沉积的非晶和随后退火的）相比，SL堆叠（沉积的多晶）的有效跨平面热导率降低高达~ 4倍。我们的SL的不同周期的热测量显示了声子相干性的签名，从波状到粒子状声子输运的过渡，进一步描述了我们的建模。这种SL的电阻率测量揭示了由于弱相互作用的范德华间隙而导致的面内和跨面方向之间的强各向异性（~ 2000 X）。本工作揭示了基于Sb 2 Te 3和GeTe的SL中的电热输运，以改进低功率PCM的设计。
英文摘要：
Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST). However, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such a SL. Here, we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to ~4X reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared to polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (~2000X) between the in-plane and cross-plane directions due to the weakly interacting van der Waals gaps. This work uncovers electro-thermal transport in SLs based on Sb2Te3 and GeTe, for improved design of low-power PCM.
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