CrN（111）薄膜中结构孪晶诱导的绝缘相
Structural Twinning-induced Insulating Phase in CrN (111) Films
摘要：
相关材料的电子态可以通过从单晶衬底传递的结构变化来有效地修改。在MgO（001）衬底上生长的CrN薄膜具有（001）取向，而在α-Al_2 O_3（0001）衬底上生长的CrN薄膜沿平行于表面法线的（111）方向取向。CrN薄膜的输运性质根据晶体学取向而显著不同。CrN 111薄膜的金属-绝缘体转变（MIT）临界厚度明显大于CrN 001薄膜。与无明显缺陷的CrN 001薄膜相比，扫描透射电镜结果表明，CrN 111薄膜存在应变诱导的结构缺陷，如：G.周期性水平孪晶畴，导致增加的电子散射，促进绝缘状态。了解决定导电层电子特性的关键参数对于未来的技术应用是非常必要的。
英文摘要：
Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.
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