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arXiv 2103.00049cond-mat.mtrl-sciphysics.comp-phquant-ph
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扭曲几何的密度泛函理论方法及其在IV族纳米管扭转变形中的应用

Density functional theory method for twisted geometries with application to torsional deformations in group-IV nanotubes

Hsuan Ming Yu, Amartya S. Banerjee

摘要:

我们提出了一种适用于扭曲几何的Kohn-Sham密度泛函理论的实空间公式和实现方法,并将其应用于X(X = C,Si,Ge,Sn)纳米管的扭曲变形的研究.我们的公式基于螺旋坐标中的高阶有限差分离散化,使用从头算赝势,并且自然地结合旋转(循环)和螺旋操作(即,螺旋)对称性。我们讨论了几个方面的计算方法,包括形式的控制方程,数值实现的细节,以及它的收敛性,精度和效率属性。这里提出的技术特别适合准一维结构及其变形的第一原理模拟,并且可以使用仅包含几个原子的小型模拟单元来研究许多感兴趣的系统。我们应用该方法系统地研究单壁锯齿形和扶手椅型IV组纳米管的性质,因为它们经历扭曲。对于所考虑的变形范围,管的机械行为被发现在很大程度上是一致的各向同性的线性弹性,随着纳米管半径的立方而变化的扭转刚度。此外,对于一个给定的管半径,这个数量被认为是最高的碳纳米管和最低的锡,而硅和锗的纳米管具有中间值接近彼此。我们还描述了不同方面的变化,因为它们是扭曲的纳米管的电子性质。特别是,我们发现,类似于众所周知的扶手椅型碳纳米管的行为,扶手椅型纳米管的硅,锗和锡也表现出带隙,周期性地变化与施加率的扭曲,和该周期性的变化规模在一个反二次的方式与管半径。

英文摘要:

We present a real-space formulation and implementation of Kohn-Sham Density Functional Theory suited to twisted geometries, and apply it to the study of torsional deformations of X (X = C, Si, Ge, Sn) nanotubes. Our formulation is based on higher order finite difference discretization in helical coordinates, uses ab intio pseudopotentials, and naturally incorporates rotational (cyclic) and screw operation (i.e., helical) symmetries. We discuss several aspects of the computational method, including the form of the governing equations, details of the numerical implementation, as well as its convergence, accuracy and efficiency properties. The technique presented here is particularly well suited to the first principles simulation of quasi-one-dimensional structures and their deformations, and many systems of interest can be investigated using small simulation cells containing just a few atoms. We apply the method to systematically study the properties of single-wall zigzag and armchair group-IV nanotubes, as they undergo twisting. For the range of deformations considered, the mechanical behavior of the tubes is found to be largely consistent with isotropic linear elasticity, with the torsional stiffness varying as the cube of the nanotube radius. Furthermore, for a given tube radius, this quantity is seen to be highest for carbon nanotubes and the lowest for those of tin, while nanotubes of silicon and germanium have intermediate values close to each other. We also describe different aspects of the variation in electronic properties of the nanotubes as they are twisted. In particular, we find that akin to the well known behavior of armchair carbon nanotubes, armchair nanotubes of silicon, germanium and tin also exhibit bandgaps that vary periodically with imposed rate of twist, and that the periodicity of the variation scales in an inverse quadratic manner with the tube radius.

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