基于GaAsN的手性光探测器
Chiral photodetector based on GaAsN
摘要：
光螺旋度的检测是从药物生产到光通信的若干研究和工业应用的关键。然而，光螺旋度的直接测量本质上是不可能的，传统的基于III-V族或IV-VI族半导体的光电探测器是天然非手性的。在光被发送到检测器之前，需要通过一系列经常移动的光学元件对光进行预先偏振分析。本文提出了一种在顺磁缺陷工程样品中有效地使传统的稀氮化物GaAs基半导体外延层具有手性光电导的方法。检测方案依赖于传导电子的巨大自旋依赖性复合和工程缺陷的伴随自旋极化，以经由电子的自旋极化来控制导带群。由于传导电子的自旋极化又与激发光的极化密切相关，因此光的极化状态可以通过简单的电导率测量来确定。这有效地赋予GaAsN外延层手性光电导性，除了其强度之外，该手性光电导性还能够区分入射激发光的手性。这种方法消除了在非手性检测器前面的任何光学元件的需要，可以提供更容易的集成和简化。这种新的手性光电探测器可以潜在地使用（In）（Al）GaAsN合金或离子注入无氮III-V族化合物在从可见光到红外的光谱范围内工作。
英文摘要：
The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional photodetectors based on III-V or IV-VI semiconductors, being naturally non-chiral. The prior polarization analysis of the light by a series of often moving optical elements is necessary before light is sent to the detector. A method is here presented to effectively give to the conventional dilute nitride GaAs-based semiconductor epilayer a chiral photoconductivity in paramagnetic-defect-engineered samples. The detection scheme relies on the giant spin-dependent recombination of conduction electrons and the accompanying spin polarization of the engineered defects to control the conduction band population via the electrons' spin polarization. As the conduction electron spin polarization is, in turn, intimately linked to the excitation light polarization, the light polarization state can be determined by a simple conductivity measurement. This effectively gives the GaAsN epilayer a chiral photoconductivity capable of discriminating the handedness of an incident excitation light in addition to its intensity. This approach, removing the need of any optical elements in front of a non-chiral detector, could offer easier integration and miniaturisation. This new chiral photodetector could potentially operate in a spectral range from the visible to the infra-red using (In)(Al)GaAsN alloys or ion-implanted nitrogen-free III-V compounds.
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