OTS选择器超快饱和电阻漂移模型
Modeling Electrical Resistance Drift with Ultrafast Saturation of OTS Selectors
摘要：
交叉开关阵列架构是密集连接的非易失性存储器（NVM）应用的基本设计元素。为了克服交叉开关阵列固有的寄生电流问题，每个存储器单元串联连接到具有高度非线性电流-电压（I-V）特性的选择器单元。近来，双向阈值切换（Ovonic Threshold Switching，OTS）材料由于其与PRAM、MRAM或ReRAM技术的制造兼容性而优选作为选择器;然而，OTS选择器遭受其阈值电压的时间漂移。首先，基于Poole-Frenkel传导，我们提出了时间和温度相关的模型，预测时间演变的I-V特性，包括阈值电压的OTS选择器。其次，我们报告了漂移的超快饱和（$\sim 10^3$秒），并扩展了模型以预测漂移饱和的时间。我们的模型与在25°C和85°C环境温度下采用8 nm技术节点制造的OTS器件具有良好的一致性。该模型对于理解OTS器件内部结构和开发可靠的阈值电压跳变表具有重要意义。
英文摘要：
Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit with highly nonlinear current-voltage (I-V) characteristics. Recently, Ovonic Threshold Switching (OTS) materials are preferred as selectors due to their fabrication compatibility with PRAM, MRAM or ReRAM technologies; however, OTS selectors suffer from the temporal drift of its threshold voltage. First, based on Poole-Frenkel conduction, we present time and temperature dependent model that predicts temporally evolving I-V characteristics,including threshold voltage of OTS selectors. Second, we report an ultrafast saturation ($\sim 10^3$ seconds) of the drift and extend the model to predict the time of drift saturation. Our model shows excellent agreement with OTS devices fabricated with 8 nm technology node at 25°C and 85°C ambient temperatures. The proposed model plays a significant role in understanding OTS device internals and the development of reliable threshold voltage jump table.
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