用于阻变数据高速测量的限流放大器
Current-limiting amplifier for high speed measurement of resistive switching data
摘要：
对于新兴的存储器和神经形态应用重要的电阻开关器件面临与控制氧化物材料中的精细介电状态相关的重大挑战。当器件切换时，其快速的电导率变化涉及正反馈过程，该过程将导致在没有电流、电压或能量限制的情况下细胞的失控破坏。通常，单元直接在MOS晶体管上图案化以限制电流，但是这种方法非常受限，因为必要的集成限制了可用的材料以及制造周期时间。在这篇文章中，我们提出了一个外部电路来循环电阻存储器单元，捕获完整的传输曲线，同时以抑制失控转换的方式驱动单元。使用该电路，我们演示了在不使用晶圆上限流晶体管的情况下每秒获取$10^5$ I-V循环的情况。这种设置将电压扫描测量带到了应用的相关时间尺度，并在统计背景下为器件评估提供了许多新的实验可能性。
英文摘要：
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in such a way to suppress runaway transitions. Using this circuit, we demonstrate the acquisition of $10^5$ I-V loops per second without the use of on-wafer current limiting transistors. This setup brings voltage sweeping measurements to a relevant timescale for applications, and enables many new experimental possibilities for device evaluation in a statistical context.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
