气相前体分子反冲注入
Recoil Implantation Using Gas-Phase Precursor Molecules
摘要：
离子注入支撑了大量需要精确控制材料的物理、化学、电子、磁性和光学特性的设备和技术。称为反冲注入的变体-其中前体作为薄膜沉积到衬底上并且经由来自入射高能离子的动量转移来注入-具有许多令人信服的优点，特别是当使用惰性离子纳米束进行时[Fröch等人，Nat Commun 11，5039（2020）]。然而，这种方法的一个主要缺点是，注入物种限于固体薄膜的成分。在这里，我们克服了这个限制，证明反冲注入使用气相前体。具体而言，我们使用Ar离子束和含氮前驱气体N2，NH3和NF 3在金刚石中制备氮空位（NV）色心。我们的工作扩大了反冲注入的适用性，大多数的周期表，和应用程序中的薄膜沉积或删除是不切实际的。
英文摘要：
Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat Commun 11, 5039 (2020)]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation to most of the periodic table, and to applications in which thin film deposition or removal is impractical.
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