由氮化镓电子器件实现的复杂负载精确、亚纳秒和高压开关
Precise, Sub-Nanosecond, and High-Voltage Switching of Complex Loads Enabled by Gallium Nitride Electronics
AI总结：
本文提出基于商用GaNFET的紧凑高压脉冲发生器，可在无阻抗匹配下对复杂分布式负载实现亚纳秒、百伏级精确开关，并通过实验与仿真验证其低功耗、可集成和广泛适用性。
摘要：
在本工作中，我们报告了利用商用氮化镓（GaN）功率电子器件在无需阻抗匹配的情况下，精确切换电子透镜和偏转器等复杂分布式负载。根据所选GaN场效应晶体管（GaNFET）和驱动器，这些GaN脉冲发生器能够以简单设计和易于控制的方式产生100–650 V、5–60 A、0.25–8 ns的脉冲，并具有数纳秒传播延迟和MHz重复率。我们通过直接耦合的2 GHz示波器实验演示了一个简单的250 ps、100 V脉冲发生器。通过引入电阻阻尼，我们可以消除振铃，从而实现精确的100 V跳变，在1.5 ns内完成从−10 V到−90 V的转换，其限制主要来自示波器测量路径的电感。对连接到各种负载结构的脉冲发生器性能进行的仿真表明，这些负载内部的电场有可能实现更快切换。这些电路还具有0.25 cm²有源区和小于1 W的功耗，使其能够集成到多种环境和装置中。这种集成使GaNFET靠近负载，从而最大限度减少拖慢开关速度的寄生参量，并允许对小负载采用集总元件近似，从而无需对50 Ω线路进行匹配。我们预计这些GaN脉冲发生器将在光学、核科学、带电粒子光学和原子物理等需要纳秒级高压跳变的领域获得广泛应用。
英文摘要：
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 V to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. These circuits also have 0.25 cm$\mathrm{^2}$ active regions and <1 W power dissipation, enabling their integration into a wide variety of environments and apparatus. The proximity of the GaNFETs to the load due to this integration minimizes parasitic quantities that slow switching as well as remove the need to match from 50 $Ω$ lines by allowing for a lumped element approximation small loads. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions.
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