锑对自组装（InGa）（AsSb）/ GaAs量子点在GaP（001）上的发射时间演化的重要性
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
摘要：
了解纳米结构的载流子动力学是开发和优化新型半导体纳米器件的关键。本文利用非共振能量和温度调制的时间分辨光致发光研究了（InGa）（AsSb）/GaAs/GaP量子点的光学性质和载流子动力学。研究这种材料系统是重要的，鉴于正在进行的实施，这样的量子点的纳米存储器件。我们的一组结构包含一个单一的量子点层，量子点过度生长的GaSb覆盖层，和单独的GaAs量子阱，分别。理论分析模型使我们能够辨别周围的发射能量为1.8 eV的GaAs量子阱和GaP衬底的共同的光谱特征。我们观察到I型发射与复合时间在2 ns和10 ns之间的量子点，向较低的能量增加。该分布表明动量直接和间接量子点跃迁共存。此外，基于相当大的可调谐性的点取决于Sb掺入，我们建议利用它们作为量子光子源嵌入在互补金属氧化物半导体（CMOS）平台，因为GaP几乎晶格匹配的Si。最后，我们的分析证实了性质的泵浦功率蓝移的发射起源于带电背景诱导的波函数拓扑结构的变化。
英文摘要：
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.
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