扭曲范德华异质结构中的超导量子干涉
Superconducting Quantum Interference in Twisted van der Waals Heterostructures
摘要：
现代超导量子干涉器件（SQUID）通常由Al或Nb电极制成，并通过原位氧化工艺在它们之间建立弱连接。然而，这种平面纳米和微米SQUID的共同问题是滞后的电流-电压曲线和浅的通量调制深度。在这里，我们证明了约瑟夫森结和SQUID的形成使用干转移技术堆叠和确定性错位片的NbSe $_{2}$，允许一个克服这些问题。结果表明，扭曲NbSe $_{2}$ -NbSe $_{2}$结的Josephson动力学对晶轴失准角敏感.然后实施单个光刻工艺以将约瑟夫森结成形为SQUID几何形状，该SQUID几何形状具有$\simeq$ 25 $μm^{2}$的典型环路面积和600 nm宽的弱连接$\simeq$。这些器件显示出大的稳定电流和电压调制深度，分别高达$ΔI_{c} \simeq$ 75 $\%$和$ΔV \simeq$ 1.4 mV。
英文摘要：
Modern Superconducting QUantum Interference Devices (SQUIDs) are commonly fabricated from either Al or Nb electrodes, with an in-situ oxidation process to create a weak link between them. However, common problems of such planar nano- and micro-SQUIDs are hysteretic current-voltage curves, and a shallow flux modulation depth. Here, we demonstrate the formation of both Josephson junctions and SQUIDs using a dry transfer technique to stack and deterministically misalign flakes of NbSe$_{2}$; allowing one to overcome these issues. The Josephson dynamics of the resulting twisted NbSe$_{2}$-NbSe$_{2}$ junctions are found to be sensitive to the misalignment angle of the crystallographic axes. A single lithographic process was then implemented to shape the Josephson junction into a SQUID geometry with typical loop areas of $\simeq$ 25 $μm^{2}$ and weak links $\simeq$ 600 nm wide. These devices display large stable current and voltage modulation depths of up to $ΔI_{c} \simeq$ 75$\%$ and $ΔV \simeq$ 1.4 mV respectively.
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