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arXiv 2101.01475cond-mat.quant-gascond-mat.str-elquant-ph
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原子Fermi-Hubbard量子模拟中的量子绝热掺杂

Quantum Adiabatic Doping for Atomic Fermi-Hubbard Quantum Simulations

Jue Nan, Jian Lin, Yuchen Luo, Bo Zhao, Xiaopeng Li

摘要:

在光晶格中加载超冷原子的哈伯德模型的量子模拟已经有了相当多的研究工作。在这类实验中,近年来人们已经在半填充状态下获得了反铁磁有序量子态。远离半填充的原子晶格有望具有d波超导性,但尚未达到其低温相。在最近的工作中,我们提出了一种无公度量子绝热掺杂的方法,利用无公度晶格的量子绝热演化,从单元填充带绝缘体出发,制备了掺杂费米-哈伯德模型的高关联多体基态.它的可行性已被证明与数值模拟的绝热制备某些无公度粒子掺杂分数,其中要规避的主要问题是在无公度晶格中的原子本地化。在这里,我们进行了系统的研究,量子绝热掺杂的掺杂范围很广,从粒子掺杂到空穴掺杂,包括公度和不公度的情况下。我们发现,仍然有一个本地化的慢下来的问题,在相称的填充,它变得不那么有害的空穴掺杂制度。在相互作用下,绝热制备被认为是更有效的相互作用效应不稳定的本地化。对于自由和相互作用的情况下,我们发现绝热掺杂有更好的性能在空穴掺杂制度比粒子掺杂制度。我们还研究了从半填充莫特绝缘体开始的绝热掺杂,这被发现是更有效的某些填充分数。

英文摘要:

There have been considerable research efforts devoted to quantum simulations of Fermi-Hubbard model with ultracold atoms loaded in optical lattices. In such experiments, the antiferromagnetically ordered quantum state has been achieved at half filling in recent years. The atomic lattice away from half filling is expected to host d-wave superconductivity, but its low temperature phases have not been reached. In a recent work, we proposed an approach of incommensurate quantum adiabatic doping, using quantum adiabatic evolution of an incommensurate lattice for preparation of the highly correlated many-body ground state of the doped Fermi-Hubbard model starting from a unit-filling band insulator. Its feasibility has been demonstrated with numerical simulations of the adiabatic preparation for certain incommensurate particle-doping fractions, where the major problem to circumvent is the atomic localization in the incommensurate lattice. Here we carry out a systematic study of the quantum adiabatic doping for a wide range of doping fractions from particle-doping to hole-doping, including both commensurate and incommensurate cases. We find that there is still a localization-like slowing-down problem at commensurate fillings, and that it becomes less harmful in the hole-doped regime. With interactions, the adiabatic preparation is found to be more efficient for that interaction effect destabilizes localization. For both free and interacting cases, we find the adiabatic doping has better performance in the hole-doped regime than the particle-doped regime. We also study adiabatic doping starting from the half-filling Mott insulator, which is found to be more efficient for certain filling fractions.

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