arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2012.14882physics.plasm-ph
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用于df rf CCP放电的虚拟IED传感器

Virtual IED sensor for df rf CCP discharges

M. Bogdanova, D. Lopaev, T. Rakhimova, D. Voloshin, A. Zotovich, S. Zyryanov

摘要:

离子辅助表面处理是现代等离子体加工的基础。离子能量分布(IED)控制对于精确的材料改性至关重要,特别是在原子级技术中,如原子层蚀刻。由于这种控制应该实时完成,因此需要使用快速过程传感器进行实时反馈。在工业等离子体反应器的一般情况下,当直接IED测量不可能时,可以使用虚拟IED传感器的概念来估计IED。在本文中,一个类似的虚拟IED传感器被认为是使用一个不对称的双频(DF)射频CCP放电为例。它是基于在射频偏置电极的IED的快速计算方法。该方法使用实验测量的鞘层电压波形和等离子体密度(或离子通量)作为输入数据,并且还包括鞘层中离子运动的蒙特卡罗模拟以考虑离子-中性碰撞的影响。为了验证这种方法,在几种气体中使用各种等离子体诊断进行实验:氩和氙作为具有原子离子的等离子体的示例,氮作为具有分子离子的等离子体的示例。它表明,在所有情况下,它是可能的,以获得足够的IED估计,接近实验,在一个合理的短时间内(~几十秒时,使用现代PC)。所获得的结果表明,在真正的等离子体处理中使用虚拟IED传感器的可能性。

英文摘要:

Ion-assisted surface processes are the basis of modern plasma processing. Ion energy distribution (IED) control is critical for precise material modification, especially in atomic-level technologies such as atomic layer etching. Since this control should be done in real time, it requires real-time feedback using fast process sensors. In the general case of an industrial plasma reactor, when direct IED measurement is not possible, the IED can be estimated using the concept of a virtual IED sensor. In this paper, a similar virtual IED sensor is considered using an asymmetric dual-frequency (df) rf CCP discharge as an example. It is based on a fast calculation method of the IED at an rf-biased electrode. This approach uses the experimentally measured sheath voltage waveform and plasma density (or ion flux) as input data, and also includes Monte-Carlo simulation of ion motion in the sheath to take into account the effect of ion-neutral collisions. To validate this approach, experiments were carried out using various plasma diagnostics in several gases: argon and xenon as examples of plasma with atomic ions and nitrogen as an example of plasma with molecular ions. It is shown that in all cases it is possible to obtain an adequate IED estimation, close to the experimental one, in a reasonably short time (~ tens of seconds when using a modern PC). The results obtained demonstrate the possibility of using a virtual IED sensor in real plasma processing.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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