Anisotropic magneto-thermal transport in Co$_2$MnGa thin films
Philipp Ritzinger, Helena Reichlova, Dominik Kriegner, Anastasios Markou, Richard Schlitz, Michaela Lammel, Gyu Hyeon Park, Andy Thomas, Pavel Streda, Claudia F… 展开作者
Philipp Ritzinger, Helena Reichlova, Dominik Kriegner, Anastasios Markou, Richard Schlitz, Michaela Lammel, Gyu Hyeon Park, Andy Thomas, Pavel Streda, Claudia Felser, Sebastian T. B. Goennenwein, Karel Vyborny
Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented.
A novel strategy of stacking binary magnets to enhance the magneto crystalline anisotropy is explored. This strategy is used in the search for hard magnets by studying FePt/MnGa and FePt/MnAl stacks. The choice of these binaries is motivated by the fact that they already possess large magneto crystalline anisotropy. Several possible alternative structures for these materials are explored in order to reduce the amount of Pt owing to its high cost.
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed clear magnetoresistance (MR) ratio up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lat…
Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-resolved photoemission spectroscopy (ARPES). We have observed a large Fermi surface with a rhombic shape in the $k_x$-$k_y$ plane overlapping neighboring Fermi surfaces. The $k_z$ dependence of the ba…
Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity…
We have characterized Co$_2$MnGa (CMG) Heusler alloy films grown on Y$_3$Fe$_5$O$_{12}$ (YIG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates at different deposition temperatures and investigated thermo-spin and magneto-thermoelectric conversion properties by means of a lock-in thermography technique. X-ray diffraction, magnetization, and electrical transport measurements show that the deposition at high substrate temperatures induces the crystallized structures of CMG while the resistivity of the CMG films on YIG (GGG) prepared at and above 500 °C (550 °C) becomes too high to measure the thermo-spi…
Co$_2$MnGa is a ferromagnetic semimetal with Weyl nodal lines identified by ARPES. We studied electrical transport in thin Co$_2$MnGa lamellae (10 $\times$ 10 $\times$ 0.4-5 microns) cut from single-crystals using a focused ion beam. These crystals exhibit an unexpected and highly unusual planar resistance anisotropy ($\sim$10 times) with principal axes that rotate by 90 degrees between the upper and lower faces. Using symmetry arguments and simulations, we find that the observed resistance anisotropy resembles that of an isotropic conductor with anisotropic surface states that are impeded fro…
We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes, where $s$ is the conduction electron state and $d$ is the localized d states. The resistivity due to electron scattering is expressed by the probability density of the d states of the current direction. The d states are numerically obtained by applying the exact diagonalization method to the Hamiltonian of the d states with the exchange field, crystal field, …
We present measurements of anisotropic magnetoresistance of La_{0.75}Sr_{0.25}MnO_3 films deposited on (001) SrTiO_3 substrates, and develop a model to describe the low temperature AMR in manganites. We measure an AMR of the order of 10^{-3} for the current I parallel to the [100] axis of the crystal and vanishing AMR for I//[110], in agreement with the model predictions.
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic magnetoresistance in angular dependent magnetoresistance (ADMR) measurements in Pt on antiferromagnetic (AF) $α$-Fe$_2$O$_3$(0001) epitaxial films at 10 K, which provide evidence for the MPE. The Néel order of $α$-Fe$_2$O$_3$ and the induced magnetization in Pt show a unique ADMR compared with all other FM and AF systems. A macrospin response model is established and can explain the AF spin configuration and all main …
We propose conceptually novel thermopile structures for the anisotropic magneto-Peltier effect (AMPE) to enhance its heating/cooling power. The cross-shaped thermopile, one of the representative AMPE-based thermopile structures, consists of four L-shaped ferromagnetic metals arranged in a cross-shaped configuration, which allows concentration of the AMPE-induced temperature modulation at the center of the cross structure. The AMPE-based thermopile does not require the use of any complicated junctions comprising different materials, enabling the design of compact and versatile temperature contr…
The anisotropic magnetoresistance (AMR) in thin permalloy strips was calculated at each steps during magnetization by the finite element method. The magnetization at equilibrium under different external fields was obtained by micromagnetic simulations, while the resistance with different magnetization was obtained by solving the Poisson equations iteratively until self-consistence. We find that the relation between magnetization and AMR deviates from the Stoner-Wohlfarth prediction when the magnetization is reduced from saturation. The reason is that the demagnetization is not necessarily from…
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states.
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. Here we report on the ability to i…
Magneto-transport study has been performed in ZrTe5 single crystals. The observed Shubnikov-de Hass quantum oscillation at low temperature clearly demonstrates the existence of a nontrivial band with small effective mass in ZrTe5. Furthermore, we also revealed the 3D anisotropic nature of high-field Landau level splitting in ZrTe5, very different from the 2D behavior measured in previous transport studies. Besides these, an abnormal large enhancement of magnetoresistance appears at high temperatures, which is believed to arise from the Lifshitz transition induced two-carrier transport in ZrTe5…
The magneto-crystalline anisotropy (MCA) of (Ga,Mn)As films has been studied on the basis of ab-initio electronic structure theory by performing magnetic torque calculations. An appreciable contribution to the in-plane uniaxial anisotropy can be attributed to an extended region adjacent to the surface. Calculations of the exchange tensor allow to ascribe a significant part to the MCA to the exchange anisotropy, caused either by a tetragonal distortion of the lattice or by the presence of the surface or interface.
A new theory is developed for the magnetoelectric (ME) coupling in a symmetric 2-2 ME laminate having a representative piezoelectric crystal (PMN-PT) particularly with anisotropic piezoelectric properties. Considering the average field method, the theoretical expressions for the transverse ME voltage coefficients at low and resonance frequencies were derived. The theory takes into account the anisotropic properties of the piezoelectric materials providing two different expressions of transverse ME voltage coefficients for different in-plane magnetic fields both at low and resonance frequencies…
Experimental measurements show that the angular dependence of the anisotropic magnetoresistance (AMR) in L1$_0$ ordered FePt epitaxial films on the current orientation and magnetization direction is a superposition of the corresponding dependences of twofold and fourfold symmetries. The twofold AMR exhibits a strong dependence on the current orientation, whereas the fourfold term only depends on the magnetization direction in the crystal and is independent of the current orientation. First-principles calculations reveal that the fourfold AMR arises from the relaxation time anisotropy due to th…
The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus spin-orbit couplings that appear at junction interfaces and in the tunneling region. We also investigate the transport properties of ferromagnet/semiconductor/…
Spin injection in metallic normal/ferromagnetic junctions is investigated taking into account the anisotropic magnetoresistance (AMR) occurring in the ferromagnetic layer. It is shown, on the basis of a generalized two channel model, that there is an interface resistance contribution due to anisotropic scattering, beyond spin accumulation and giant magnetoresistance (GMR). The corresponding expression of the thermopower is derived and compared with the expression for the thermopower produced by the GMR. First measurements of anisotropic magnetothermopower are presented in electrodeposited Ni n…
In metallic ferromagnets, the Berry curvature of underlying quasiparticles can cause an electric voltage perpendicular to both magnetization and an applied temperature gradient, a phenomenon called the anomalous Nernst effect (ANE). Here, we report the observation of a giant ANE in the full-Heusler ferromagnet Co$_2$MnGa, reaching $S_{yx}\sim -6$ $μ$V/K at room $T$, one order of magnitude larger than the maximum value reported for a magnetic conductor. With increasing temperature, the transverse thermoelectric conductivity or Peltier coefficient $α_{yx}$ shows a crossover between $T$-linear an…
We present results of anisotropic thermal expansion and low temperature magnetostriction measurements on YNi$_2$B$_2$C single crystals grown by high temperature flux and floating zone techniques. Quantum oscillations of magnetostriction were observed at low temperatures for $H \| c$ starting at fields significantly below $H_{c2}$ ($H < 0.7 H_{c2}$). Large irreversible, longitudinal magnetostriction was seen in both, in-plane and along the c-axis, directions of the applied magnetic field in the intermediate superconducting state. Anisotropic uniaxial pressure dependencies of $T_c$ were evaluate…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a ferromagnet. A general scenario of the antiferromagnetic anisotropic magnetoresistance effects mainly stems from the magnetocrystalline anisotropy related to spin-orbit coupling. Here we demonstrate magnetic field driven contour rotation of the fourfold anisotropic magnetoresistance in bare antiferromagnetic Sr2IrO4/SrTiO3 (001) thin films hosting a strong spin-orb…
We study theoretically the anisotropic magneto-Peltier effect, which was recently demonstrated experimentally. A first-principles-based Boltzmann transport approach including the spin-orbit interaction shows that Ni has a larger anisotropy of the Peltier coefficient ($ΔΠ$) than Fe, consistent with experiments. It is clarified that spin-flip electron transitions due to the spin-orbit interaction are the key in the mechanism of the large anisotropic magneto-Peltier effect. Using our method, we further predict several ferromagnetic metals with much larger $ΔΠ$ than that of Ni.
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.
We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlO$_x$ nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlO$_x$-NOL/Pt. Analysis of NC formation was based on \emph{in situ} conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature.
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H//…
We theoretically and numerically show that longitudinal orbital currents in ferromagnets depend on the magnetization direction, which contribute to the anisotropic magnetoresistance (AMR). This orbital contribution to AMR arises from the momentum-dependent orbital splitting, which is generally present in multi-orbital systems through the orbital anisotropy and the orbital hybridization. We highlight the latter orbital hybridization as an unrecognized origin of AMR and also as a common origin of AMR and orbital Hall effect.
We analyze in this article the magneto-resistance ratio of finite and infinite iridium and platinum chains. Our calculations, that are based on a combination of non equilibrium Green function techniques and density functional theory, include a fully self-consistent treatment of non-collinear magnetism and of the spin-orbit interaction. They indicate that, in addition to having an extremely large magnetic anisotropy that may overcome the super-paramagnetic limit, infinite and also realistic finite-length iridium chains show sizeable anisotropic magnetoresistance ratios. We therefore propose iri…
TaTe2 is a quasi-2D charge density wave (CDW) compound with distorted-1T type structure exhibiting double-zigzag chains. Here we report the Fermi surface topology of low temperature phase of TaTe2 (LT-TaTe2) by anisotropic magneto-transport and magnetic measurements on high-quality single crystals. An anomalous large linear magnetoresistance up to 140% at 3 K in 9 T was observed, suggesting the existence of a small Fermi pocket in Dirac cone state in quantum transport models. Meanwhile, strong magnetic anisotropy was observed for B (001) and B//(001). Angle-dependent magnetoresistance and de H…
We exploit the magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices to realize a crossover between inverse and conventional magnetic entropy changes. Our data reveal a strong anisotropic nature of the magnetocaloric effect due to the magnetic anisotropy of the superlattice. Therefore, artificial superlattices built from ferromagnetic materials that can be used to alter the magnetic structure as well as the magnetic anisotropy, could also be utilized for tuning the magnetocaloric properties, which may open a constructive approach for magnetic refrigeration applications.
The magnetization characteristic in a permalloy thin strip is investigated by electrically measuring the anisotropic magnetoresistance and ferromagnetic resonance in in-plane and out-of-plane configurations. Our results indicate that the magnetization vector can rotate in the film plane as well as out of the film plane by changing the intensity of external magnetic field of certain direction. The magnetization characteristic can be explained by considering demagnetization and magnetic anisotropy. Our method can be used to obtain the demagnetization factor, saturated magnetic moment and the mag…
We investigate the magnetic and magnetotransport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films grown on (100) oriented SrTiO3 (STO) substrates. The thin films fabricated using the pulsed laser deposition technique have been found to possess two distinct surface morphologies: granular and nano rod type. Magnetization measurements have revealed that the films with rod-type morphology exhibit improved in-plane magnetic anisotropy. Magnetotransport studies have revealed that the granular thin films display a characteristic butterfly-shaped low-field magneto-resistive (LFMR) behavio…
In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM), interfacial spin orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance (AMR). We theoretically investigate the magnetotransport in such bilayer structures by solving the spinor Boltzmann transport equation with generalized Fuchs-Sondheimer boundary condition that takes into account the effect of spin orbit scattering at the interface. We find that the new AMR exhibits a peculiar angular dependence which can serve as a genuine exp…
We present the Co-Gd composition dependence of the spin-Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) for ferrimagnetic Co100-xGdx / Pt bilayers. With Gd concentration x, its magnetic moment increasingly competes with the Co moment in the net magnetization. We find a nearly compensated ferrimagnetic state at x = 24. The AMR changes sign from positive to negative with increasing x, vanishing near the magnetization compensation. On the other hand, the SMR does not vary significantly even where the AMR vanishes. These experimental results indicate that very different scatte…
We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineer…
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consist…
We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curie temperature (TC) which decrease as the film thickness increases. The sign reversal of AMR (with a maximum value of - 6) with magnetic field or temperature for the 4 nm thin film may be attributed to the increase in tensile strain in the plane of the thin film which in turn facilitates the rotatio…
Thin films of perovskite manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ were grown epitaxially on various substrates by either the pulsed laser deposition method or laser molecular beam epitaxy. The substrates change both the volume and symmetry of the unit cell of the films. It is revealed that the symmetry as well as the volume of the unit cell have strong influence on the metal-insulator transition temperature and the size of magnetoresistance.
We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In systems without localized states, like chemically pure break junctions, large AMR only occurs if the orbital polarization of the current is large, regardless of the anisotropy of the density of states. In systems that display localized states close to the Fermi energy, like a single electron transistor with ferromagnetic electrodes, large AMR is related to the var…
We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on nonlocal signals when the in-plane device structure is not optimized. Moreover, realization of a pure spin current by spin diffusion was found to be virtually impossible because of the electric potential distribution in the depth direction in the Si channel. Although apparent signals indicating the spin-valve effect were not detected, we mainly present structur…
We derive the general expression of the anisotropic magnetoresistance (AMR) ratio of ferromagnets for a relative angle between the magnetization direction and the current direction. We here use the two-current model for a system consisting of a spin-polarized conduction state (s) and localized d states (d) with spin-orbit interaction. Using the expression, we analyze the AMR ratios of Ni and a half-metallic ferromagnet. These results correspond well to the respective experimental results. In addition, we give an intuitive explanation about a relation between the sign of the AMR ratio and the s…
First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few mV. Our results bear a resemblance to recent experimental data and …
Optical anisotropy is usually treated as an unfavorable condition for the magneto-optical measurements since it is known to diminish the Faraday rotation concerning the case of the isotropic medium. Here we show that the situation could be quite opposite: a phenomenon of birefringence mediated enhancement of the magneto-optical activity appears if the incident light polarization and angle of incidence are set properly. The present study relies on the experimental, analytical, and numerical studies of iron borate $\mathrm{FeBO_3}$ crystals. We demonstrate a significant increase of the magneto-o…
We investigate the anisotropic nature of magnetocrystalline coupling between the crystallographic and skyrmion crystal (SKX) lattices in the chiral magnet MnSi by magnetic field-angle resolved resonant ultrasound spectroscopy. Abrupt changes are observed in the elastic moduli and attenuation when the magnetic field is parallel to the [011] crystallographic direction. These observations are interpreted in a phenomenological Ginzburg-Landau theory that identifies switching of the SKX orientation to be the result of an anisotropic magnetocrystalline coupling potential. Our paper sheds new light o…
We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the oth…
Ballistic transport was studied in a multiple-band system consisting of an antidot lattice of AB-stacked trilayer graphene. The low temperature magnetoresistance showed commensurability peaks arising from matching of the antidot lattice period and radius of cyclotron orbits for each mono- and bilayer-like band in AB stacked trilayer graphene. The commensurability peak of the monolayer-like band appeared at a lower magnetic field than that of the bilayer-like band, which reflects the fact that the Fermi surface of the bilayer-like band is larger than that of monolayer-like band. Rotation of the…
