本征磁性半导体中巨光生自旋极化子的模拟
Modeling huge photoinduced spin polarons in intrinsic magnetic semiconductors
摘要：
在本征磁性半导体中，单个光子的吸收可以产生自旋极化子，其磁矩达到数千个玻尔磁子[1.2]。本文利用蒙特卡罗模拟研究了光诱导自旋极化子。在反铁磁半导体中，光致自旋极化子在直至相变的整个温度区间中最有效地产生，而在铁磁半导体中，可以光致产生大得多的自旋极化子，但仅在相变温度附近。由于蒙特卡罗模拟计算成本高，我们开发了一个分析模型，基于外斯场论。虽然Weiss模型不能提供像蒙特卡罗模拟那样多的信息，例如自旋织构和涨落，但它产生的公式可以用来立即估计许多内禀磁性半导体中预期的光致自旋极化子尺寸。
英文摘要：
In intrinsic magnetic semiconductors, the absorption of a single photon can generate a spin polaron, whose magnetic moment reaches many thousands of Bohr magnetons [1.2]. Here we investigate photoinduced spin polarons, using Monte Carlo simulations. In antiferromagnetic semiconductors, photoinduced spin polarons are most efficiently generated in the whole temperature interval up to the phase transition, whereas in ferromagnetic semiconductors much larger spin polarons can be photoinduced, but only around the phase transition temperature. Because Monte Carlo simulations are computationally expensive, we developed an analytical model, based on the Weiss field theory. Although the Weiss model does not provide as much information as a Monte Carlo simulation, such as spin texture and fluctuations, it yields formulas that can be used to estimate instantly the expected photoinduced spin polaron size in many intrinsic magnetic semiconductors.
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