MoSe2MoS2异质双层膜光诱导超快THz响应的增强
Enhancement in optically induced ultrafast THz response of MoSe2MoS2 heterobilayer
摘要：
在0.3-5 THz频率范围内测量了大面积MoS 2和MoSe 2单层及其垂直异质结构MoSe 2 MoS 2的THz电导率。与单层相比，MoSe 2 MoS 2异质双层的超快THz反射率在光学激发高于构成单层的直接带隙能量时增强了许多倍。在异质双分子层中产生的自由载流子随着在两个单层中的每一个中发现的特征时间而演变。令人惊讶的是，相同的增强记录在ultrafst太赫兹反射率的异质双层激发时，低于MoS 2带隙能量。提出了一种解释这些观察结果的机制。
英文摘要：
THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.
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