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arXiv 2012.09149cond-mat.mes-hallphysics.chem-ph
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TiO $_2$薄层对水中III-V纳米线断裂的鲁棒保护

Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO$_2$ Layer

Fan Cui, Yunyan Zhang, H. Aruni Fonseka, Premrudee Promdet, Ali Imran Channa, Mingqing Wang, Xueming Xia, Sanjayan Sathasivam, Hezhuang Liu, Ivan P. Parkin, Hui… 展开作者

Fan Cui, Yunyan Zhang, H. Aruni Fonseka, Premrudee Promdet, Ali Imran Channa, Mingqing Wang, Xueming Xia, Sanjayan Sathasivam, Hezhuang Liu, Ivan P. Parkin, Hui Yang, Ting Li, Kwang-Leong Choy, Jiang Wu, Chris Blackman, Ana M. Sanchez, Huiyun Liu

摘要:

具有合适能带结构和强陷光能力的窄带隙III-V族半导体纳米线(NWs)是高效低成本太阳能水分解系统的理想材料。然而,由于它们的纳米尺寸,它们比薄膜对应物遭受更严重的电解质溶液腐蚀。因此,短期耐久性是将这些NW用于实际水裂解应用的主要障碍。在这里,我们首次证明了通过原子层沉积法沉积的致密TiO $_2$薄层(约7 nm厚)可以为III-V族纳米线提供强大的保护。在大气环境中储存14个月后,被保护的GaAs纳米线保持其光致发光强度的91.4%,这表明TiO $_2$层是无针孔的。作为水裂解的光电阴极,它们表现出比未保护的光电阴极高45%的光电流密度和高达91%的法拉第效率,并且在窄带隙III-V NW光电极中保持了创纪录的高稳定性能;在强酸电解质溶液(pH = 1)中进行67小时的光电化学稳定性测试反应后,它们没有显示出明显的腐蚀迹象,这与35小时后完全失效的未受保护的NW形成鲜明对比。这些发现提供了一种有效的方法来提高III-V NW基光电极的稳定性和性能,这对于基于太阳能的水裂解系统中的实际应用非常重要。

英文摘要:

Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer more severe corrosion by the electrolyte solution than the thin-film counterparts. Thus, short-term durability is the major obstacle for using these NWs for practical water splitting applications. Here, we demonstrated for the first time that a thin layer (~7 nm thick) of compact TiO$_2$ deposited by atomic layer deposition can provide robust protection to III-V NWs. The protected GaAs NWs maintain 91.4% of its photoluminescence intensity after 14 months of storage in ambient atmosphere, which suggests the TiO$_2$ layer is pinhole-free. Working as a photocathode for water splitting, they exhibited a 45% larger photocurrent density compared with un-protected counterparts and a high Faraday efficiency of 91%, and can also maintain a record-long highly-stable performance among narrow-bandgap III-V NW photoelectrodes; after 67 hours photoelectrochemical stability test reaction in strong acid electrolyte solution (pH = 1), they show no apparent indication of corrosion, which is in stark contrast to the un-protected NWs that are fully failed after 35-hours. These findings provide an effective way to enhance both stability and performance of III-V NW based photoelectrodes, which are highly important for practical applications in solar-energy-based water splitting systems.

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