We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers. Type-II band alignment with layer-tunable band gaps and type-III band alignment with spin-splittings have been found. Most noticeably, we reveal the coexistence of Rashba-type spin-splittings (with large $α_{\rm R}$ parameters) in both the conduction and valence band stemming from few-layer Bi$_2$Se$_3$ and PtSe$_2$, respectively, which has been confirmed by spin-texture plots. We discuss the role of inversion symmetry breaking, changes in orbital hybridization and spin-orbit coupling in altering electronic dispersion near the Fermi level. Since low-temperature growth mechanisms are available for both materials, we believe that few-layer Bi$_2$Se$_3$/PtSe$_2$ vdW heterostructures are feasible to realize experimentally, offering great potential for electronic and spintronics applications.
A variety of fabrication methods for van der Waals heterostructures have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we report few-layer van der Waals PtS2/PtSe2 heterojunction photodiodes fabricated on a 2" SiO2/Si substrate that is only limited by the size of work chamber of the growth equipment, offering throughputs necessary for practical applications. Theoretical simulation results show that the bandgap of PtS2 is shrunk to half of its original size in the PtS2/PtSe2 heterostructures, while PtSe2 exhibits a limited response to the coupling. Both PtSe…
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broadband metasurface superabsorber based on large area, semimetallic, van der Waals PtSe2 thin films in agreement with electromagnetic simulations. Our results show that PtSe2 is an ultrathin and scalabl…
Van der Waals heterostructures formed by stacking different types of 2D materials are attracting increasing attention due to new emergent physical properties such as interlayer excitons. Recently synthesized atomically thin indium selenide (InSe) and antimony (Sb) individually exhibit interesting electronic properties such as high electron mobility in the former and high hole mobility in the latter. In this work, we present a first-principles investigation on the stability and electronic properties of ultrathin bilayer heterostructures composed of InSe and Sb single layers. The calculated elec…
The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin of charge-to-spin conversion mechanisms such as Rashba-Edelstein effect (REE) and spin Hall effect (SHE). In this work, we experimentally demonstrate for the first time charge-to-spin conversion due to the REE in a monolayer WS2-graphene van der Waals heterostructure. We measure the current-induced spin polarization up to room temperature and contro…
The compositional as well as structural asymmetries in Janus transition metal dichalcogenides (J-TMDs) and their van der Waals heterostructures (vdW HSs) induce an intrinsic Rashba spin-splitting. We investigate the variation of band-gaps and the Rashba parameter in three different Janus heterostructures having AB-stacked Mo$XY$/W$XY$ ($X$, $Y$ = S, Se, Te; $X\neq Y$) geometry with a $Y-Y$ interface, using first-principles calculations. We consider the effect of external electric field and in-plane biaxial strain in tuning the strength of the intrinsic electric field, which leads to remarkable…
Université Grenoble Alpes, CEA, CNRS, IRIG-SPINTEC（格勒诺布尔阿尔卑斯大学）；Laboratoire de Physique de l’Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris（巴黎高等师范学院物理实验室）；PSI Center for Scientific Computing, Theory and Data, Paul Scherrer Institute（保罗谢勒研究所）；Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay（巴黎萨克雷大学）；Université Paris-Saclay, UVSQ, CNRS, GEMaC（巴黎萨克雷大学）
We show that in van der Waals stacks of twisted hexagonal layers the proximity induced Rashba spin-orbit coupling can be affected by quantum interference. We calculate the quantum phase responsible for this effect in graphene--transition metal dichalcogenide bilayers as a function of interlayer twist angle. We show how this quantum phase affects the spin-polarization of the graphene bands and discuss its potential effect on spin-to-charge conversion measurements. In twisted trilayers symmetries can be broken as well as restored for certain twist angles. This can be used to deduce the effects o…
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS$_2$ proximity and for varying temperature up to room temperature. The fact that spin transport and spin …
Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density all…
We intercalate a van der Waals heterostructure of graphene and hexagonal Boron Nitride with Au, by encapsulation, and show that Au at the interface is two dimensional. A charge transfer upon current annealing indicates redistribution of Au and induces splitting of the graphene bandstructure. The effect of in plane magnetic field confirms that splitting is due to spin-splitting and that spin polarization is in the plane, characteristic of a Rashba interaction with magnitude approximately 25 meV. Consistent with the presence of intrinsic interfacial electric field we show that the splitting can …
The possibility to tailor photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDCs) using external factors such as strain, doping and external environment is of significant interest for optoelectronic applications. Strain in particular can be exploited as a means to continuously vary the bandgap. Micrometer-scale strain gradients were proposed for creating 'artificial atoms' that can utilize the so-called exciton funneling effect and work, for example, as exciton condensers. Here we describe room-temperature PL emitters that naturally occur whenever monolayer TMDC is deposit…
The possibility to achieve charge-to-spin conversion via Rashba spin-orbit effects provide stimulating opportunities toward the development of nanoscale spintronics. Here we use first-principles calculations to study the electronic and spintronic properties of Tl$_2$O/PtS$_2$ heterostructure, for which we have confirmed the dynamical stability by its positive phonon frequencies. An unexpectedly high binding energy of -0.38 eV per unit cell depicts strong interlayer interactions between Tl$_2$O and PtS$_2$. Interestingly, we discover Rashba spin-splitting's (with large $α_R$ value) in the valen…
Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin-orbit coupling and novel spin textures have attracted significant attention for an efficient charge to spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and det…
The weak interlayer Van Der Waals material \{beta}-Bi2Pd has recently been established as a strong topological superconductor candidate with unconventional spin-triplet pairing and Majorana zero modes at vortices. In this letter, we study the topological characters and the superconducting pairing, which are still obscure in monolayer \{beta}-Bi2Pd, in light of our effective theoretical model. We find that the non-Rashba spin-orbital coupling plays a critical role in realizing and tuning various novel topological natures. In particular, the spin-triplet p-wave superconducting pairing with Major…
Giant orbital Zeeman effects in a magnetic topological van der Waals interphase
Forschungszentrum Jülich（于利希研究中心）；Jülich Aachen Research Alliance, Fundamentals of Future Information Technology（于利希-亚琛研究联盟，未来信息技术基础）；RWTH Aachen University（亚琛工业大学）；Johannes Gutenberg University（约翰内斯·古腾堡大学）；Korea University（高丽大学）；Martin-Luther-University Halle-Wittenberg（哈雷-维滕贝格马丁路德大学）；Universität zu Köln（科隆大学）
The spin and valley polarizations and plasmonics in Van der Waals heterostructures of strained graphene monolayer on 2D transition metal dichalcogenide (GrTMD) substrate are reported in this communication. The substrate induced interactions (SII) involve sub-lattice-resolved, and enhanced intrinsic spin-orbit couplings, the extrinsic Rashba spin-orbit coupling (RSOC), and the orbital gap related to the transfer of the electronic charge from graphene to the substrate. Furthermore, magnetic impurity atoms are deposited to the graphene surface and the corresponding exchange field is included in t…
Fundamental symmetry breaking and relativistic spin-orbit coupling give rise to fascinating phenomena in quantum materials. Of particular interest are the interfaces between ferromagnets and common s-wave superconductors, where the emergent spin-orbit fields support elusive spin-triplet superconductivity, crucial for superconducting spintronics and topologically-protected Majorana bound states. Here, we report the observation of large magnetoresistances at the interface between a quasi-two-dimensional van der Waals ferromagnet Fe0.29TaS2 and a conventional s-wave superconductor NbN, which prov…
All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit coupling and in particular, the spin-momentum locked topological surface states (TSS) supporting helically spin polarized currents. Many TI materials such as Bi-based chalcogenides are also layered 2D materials and can be incorporated into van der Waals (vdW) coupled heterostructures, opening the possibility of the utilization of TIs for electrical spin injectio…
Engineering nonlinear spin-orbit torque driven by intra-band transport in MoSe$_2$/CrI$_3$ and WSe$_2$/CrI$_3$ van der Waals heterostructures
Faculty of Science, Department of Physics, Shahid Chamran University of Ahvaz（阿瓦士沙希德·恰姆兰大学理学院物理系）；School of Quantum Physics and Matter, Institute for Research in Fundamental Sciences (IPM)（基础科学研究所量子物理与物质学院）；Department of Physics, Zhejiang Normal University（浙江师范大学物理系）
Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi$_{2}$Se$_{3}$ and a single Se-Ta-Se triple-layer (TL) of H-type TaSe$_{2}$ grown by a nov…
Van der Waals heterostructures based on two-dimensional materials have recently become a very active topic of research in spintronics, both aiming at a fundamental description of spin dephasing processes in nanostructures and as a potential element in spin-based information processing schemes. Here, we theoretically investigate the magnetoconductance of mesoscopic devices built from graphene proximity-coupled to a high spin-orbit coupling material. Through numerically exact tight-binding simulations, we show that the interfacial breaking of inversion symmetry generates robust weak antilocaliza…
We theoretically study the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides monolayer stacked with arbitrary twist angles. We find that the relative rotation greatly enhances the spin splitting of graphene, typically by a few to ten times compared to the non-rotated geometry,and the maximum splitting is achieved around $20^\circ$. The induced SOC can be changed from the Zeeman-type to the Rashba-type by rotation. The spin-splitting is also quite sensitive to the gate-induced potential, and it sharply rises when the graphene's Dirac point is shifted toward the TMDC …
Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting transition metal dichalcogenide--to engineer Kane-Mele SOC in ultra-clean \textit{bilayer} graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find th…
Orientation-tunable correlated Chern insulating states in chiral twisted double bilayer graphene proximitized by WSe2
Nanjing University（南京大学）；Hefei National Laboratory（合肥国家实验室）；Yangtze Delta Region Academy of Beijing Institute of Technology (Jiaxing)（北京理工大学长三角研究院（嘉兴））；National Institute for Materials Science（国立材料研究所）；Beijing Institute of Technology（北京理工大学）；Nanjing University of Science and Technology（南京理工大学）；Jiangsu Physical Science Research Center（江苏物理科学研究中心）
The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW) heterostructures of two-dimensional materials. Here, we exploit a proximity-induced Rashba-Edelstein (REE) effect in vdW heterostructures of Weyl semimetal candidate MoTe2 and CVD graphene, where an unprecedented gate-controlled switching of spin-galvanic effect emerges due to an efficient spin-to-charge conversion at room temperature. The magnitude of the me…
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using first-principles combined with quantum transport calculations, we predict that such doubly proximitized graphene within van der Waals heterostructure will exhibit SO torque driven by unpolarized charge current. This system lacking spin Hall current, putatively considered to be necessary for efficient damping-like (DL) SO torque that plays a key role in magnetization swit…
Proximity-induced fine features and spin-textures of the electronic bands in graphene-based van der Waals heterostructures can be explored from the point of tailoring a twist angle. Here we study spin-orbit coupling and exchange coupling engineering of graphene states in the proximity of 1T-TaS$_2$ not triggering the twist, but a charge density wave in 1T-TaS$_2$-a realistic low-temperature phase. Using density functional theory and effective model we found that the emergence of the charge density wave in 1T-TaS$_2$ significantly enhances Rashba spin-orbit splitting in graphene and tilts the s…
We report the interesting possibilities related to the plasmonics and the key parameters of optoelectronics, such as the absorbance and the transmittance, in Van der Waals heterostructures of graphene monolayer on 2D transition metal dichalcogenide (GrTMD) substrate here. We obtain the gapped bands with a Rashba spin-orbit coupling dependent pseudo Zeeman field due to the interplay of substrate induced interactions. This enables us to obtain an expression of the dielectric function in the finite doping case ignoring the spin-flip scattering events completely. We observe that the relative stren…
Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature
