Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets

We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is characterized by gate transfer characteristic measurements and by magnetic field orientation dependent transport measurements. The measurements show that the device exhibits excellent electrical properties and the electron transport in the nanosheet is of the two-dimensional nature. Low-field magnetoconductance measurements are performed for the device at diffe…

氯化钠辅助生长具有自旋玻璃行为的铁电SnSe纳米片

NaCl-Assisted Growth of Ferroelectric SnSe Nanosheets with Spin Glass-like Behavior

研究通过氯化钠辅助化学气相沉积法合成高质量单晶SnSe纳米片，发现其具有自旋玻璃行为，揭示了SnSe2杂质的影响，为铁电性质研究奠定基础。

Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing

Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonst…

GaTe辅助CVD可控合成亚毫米超薄二维铁磁Cr5Te8纳米片

Controllable Synthesis of Submillimeter Ultrathin 2D Ferromagnetic Cr5Te8 Nanosheets by GaTe-Assisted CVD

本文提出GaTe辅助CVD方法，通过优化生长温度和源-衬底距离可控合成亚毫米级超薄二维铁磁Cr5Te8纳米片，并揭示其面外铁磁性及172 K居里温度。

Room Temperature Device Performance of Electrodeposited InSb Nanowire Field Effect Transistors

In this study, InSb nanowires have been formed by electrodeposition and integrated into NW-FETs. NWs were formed in porous anodic alumina (PAA) templates, with the PAA pore diameter of approximately 100 nm defining the NW diameter. Following annealing at 125C and 420C respectively, the nanowires exhibited the zinc blende crystalline structure of InSb, as confirmed from x-ray diffraction and high resolution transmission electron microscopy. The annealed nanowires were used to fabricate nanowire field effect transistors (NW-FET) each containing a single NW with 500 nm channel length and gating t…

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, high-quality heteroepita…

Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO$_2$ and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with …

Transparent Gatable Superconducting Shadow Junctions

Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and $\mathrm{InAs_{1-x}Sb_x}$ nanowires with epitaxial superconductors and in-situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction mo…

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is important for fundamental studies of material properties as well as for quantum information processing with electron, hole, and nuclear-spin states. Through a combination of first-principles density-functional theory (DFT) and $\mathbf{k}\cdot\mathbf{p}$ theory, we have calculated hyperfine tensors for electrons and holes in GaAs and crystalline silicon. Accounting for relativistic effects near the nuclear core, we find contact hyperfine interactions for electrons in GaAs that are consistent with Knight-s…