Simultaneous gain profile design and noise figure prediction for Raman amplifiers using machine learning

Experimental Validation of Spectral-Spatial Power Evolution Design Using Raman Amplifiers

We experimentally validate a machine learning-enabled Raman amplification framework, capable of jointly shaping the signal power evolution in two domains: frequency and fiber distance. The proposed experiment addresses the amplification in the whole C-band, by optimizing four first-order counter-propagating Raman pumps.

双向拉曼放大器优化中黑盒、灰盒与白盒建模的比较

A comparison between black-, grey- and white-box modeling for the bidirectional Raman amplifier optimization

本文比较了白盒、灰盒和黑盒模型在优化双向分布式拉曼放大器以实现目标功率分布时的性能，发现三类方法均可在80公里C波段实现1至3.6 dB的平坦度，并分析了各自在灵活性、优化速度和数据需求上的适用性。

Nonreciprocal low-noise acoustoelectric microwave amplifiers with net gain in continuous operation

Over sixty years ago, it was hypothesized that specially designed acoustic systems that leveraged the acoustoelectric effect between phonons and charge carriers could revolutionize radio frequency electronic systems by allowing nonlinear and nonreciprocal functionalities such as gain and isolation to be achieved in the acoustic domain. Despite six decades of work, no acoustoelectric amplifier has been produced that can achieve a large net (terminal) gain at microwave frequencies with low power consumption and noise figure. Here we demonstrate a novel three-layer acoustoelectric heterostructure…

Experimental characterization of Raman amplifier optimization through inverse system design

Optical communication systems are always evolving to support the need for ever-increasing transmission rates. This demand is supported by the growth in complexity of communication systems which are moving towards ultra-wideband transmission and space-division multiplexing. Both directions will challenge the design, modeling, and optimization of devices, subsystems, and full systems. Amplification is a key functionality to support this growth and in this context, we recently demonstrated a versatile machine learning framework for designing and modeling Raman amplifiers with arbitrary gains. In …

硅基光子学大模场（LMA）放大器：高功率、高增益、低噪声且偏振灵敏度可调

Silicon photonics LMA amplifiers: High power, high gain, low noise and tunable polarization sensitivity

本研究将大模场（LMA）技术应用于硅基光子集成芯片，研制出兼具高功率、高增益、低噪声特性且偏振灵敏度可调的LMA放大器，性能超越多数集成及光纤放大器，有望赋能下一代电信网络集成放大器。

Experimental demonstration of arbitrary Raman gain-profile designs using machine learning

A machine learning framework for Raman amplifier design is experimentally tested. Performance in terms of maximum error over the gain profile is investigated for various fiber types and lengths, demonstrating highly-accurate designs.

120 Tbit/s Transmission over Single Mode Fibre using Continuous 91 nm Hybrid Raman-EDFA Amplification

Hybrid distributed Raman-EDFA amplifiers, with a continuous 91 nm gain bandwidth, are used to enable a record single mode fibre transmission capacity of 120.0 Tbit/s using 312x35 GBd DP-256QAM over 9x70 km spans.

A $χ^{(2)}$-based AlGaAs Phase Sensitive Amplifier with Record Gain, Noise and Sensitivity

Phase sensitive amplifiers (PSAs) have the potential to empower substantial advances in emerging generations of optical communication systems as well as classical and quantum on-chip signal processing. The core building block of a PSA is a nonlinear medium. While the second-order nonlinearity ($χ^{(2)}$) is stronger than the third-order nonlinearity ($χ^{(3)}$), it is used less often in semiconductors for parametric amplification owing to the challenges of effectively phase matching the interacting waves as well as two-photon absorption of the pump. In this work, we demonstrate the successful …

一种基于光子芯片的超宽带行波参量放大器

An ultra-broadband photonic-chip-based traveling-wave parametric amplifier

本研究采用低损耗二氧化硅上磷化镓光子集成电路，突破带宽与损耗的权衡难题，实现了超宽带高增益的连续波光放大，为光通信等领域提供新方案。

A small-signal description of black phosphorus transistor technologies for high-frequency applications

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are designed at 2.4 GHz using the experimentally-calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.

Broadband Parametric Impedance Matching for Small Antennas Using the Bode-Fano Limit

In this work, a parametric up-converter amplifier is introduced as a wideband impedance matching network for receiving electrically small antennas. Chu's limit restricts the minimum Q-factor of unloaded small antennas; however, the practical bandwidth of small antennas is defined by their loaded Q-factor. By connecting a small antenna to an amplifier with a real input impedance several times greater than the radiation resistance of the antenna, we propose increasing the return loss to reduce the loaded Q-factor and increase the bandwidth as a result of the Bode-Fano theorem. In addition, a par…

用于读取 Transmon 量子比特的全集成 45 nm CMOS 片上系统接收机设计

Design of Fully Integrated 45 nm CMOS System-on-Chip Receiver for Readout of Transmon Qubit

本研究提出全集成45nm CMOS片上系统接收机设计，结合量子理论设计Transmon量子比特与Josephson参量放大器，实现低功耗、高增益、宽带宽，可读取至少90个量子比特，为量子计算应用提供创新方案。

基于量子比特的InP HEMT低噪声放大器基准测试：读出保真度与功耗的权衡

Qubit-Based Benchmarking of InP HEMT LNAs: Readout Fidelity Versus Power Consumption

提出量子比特在环基准测试方法，用单次读出IQ直方图评估InP HEMT LNA，发现60%铟含量器件保真度最高，为功率受限读出系统提供选型指导。