122 keV $γ$射线对非晶硒电离响应的测量
Measurement of the ionization response of amorphous selenium with 122keV $γ$ rays
摘要：
我们在高达50 V/ $μ$ m的漂移电场下对200 $μ$ m厚的非晶硒（aSe）层的电离响应进行了测量。aSe靶暴露于来自$^{57}$ Co放射源的电离辐射，并且以高分辨率记录电离脉冲。利用122 keV $γ$射线光吸收谱线，我们测量了aSe中的电荷产额和线宽随漂移电场的变化。从一个详细的微观物理模拟的电荷产生和复合在硒，我们得出结论，强烈依赖的电离轨道密度的复合提供了主导贡献的能量分辨率在硒。这些结果提供了有价值的输入，以估计所提出的下一代搜索的无中微子$ββ$衰变的$^{82}$硒，旨在采用成像传感器与aSe的活性层的灵敏度。我们估计的积分电离信号的RMS线宽从中微子$ββ$衰变事件（沉积能量为3 MeV）为2.0%的漂移场为50 V/ $μ$ m。能量分辨率可以提高到1%，通过校正作为电离密度的函数沿成像的电子轨道的电荷产额。
英文摘要：
We performed a measurement of the ionization response of 200 $μ$m-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/$μ$m. The aSe target was exposed to ionizing radiation from a $^{57}$Co radioactive source and the ionization pulses were recorded with high resolution. Using the spectral line from the photoabsorption of 122 keV $γ$ rays, we measured the charge yield in aSe and the line width as a function of drift electric field. From a detailed microphysics simulation of charge generation and recombination in aSe, we conclude that the strong dependence of recombination on the ionization track density provides the dominant contribution to the energy resolution in aSe. These results provide valuable input to estimate the sensitivity of a proposed next-generation search for the neutrinoless $ββ$ decay of $^{82}$Se that aims to employ imaging sensors with an active layer of aSe. We estimate the RMS line width of the integrated ionization signal from neutrinoless $ββ$ decay events (of deposited energy 3 MeV) to be 2.0% for a drift field of 50 V/$μ$m. The energy resolution can be improved to 1% by correcting for the charge yield as a function of ionization density along the imaged electron tracks.
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