Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets at the top of the nanowires. Optical and transport measurements revealed that the limit of Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., is mu…

镓掺杂对分子束外延生长的拓扑绝缘体Bi₂Se₃结构与输运性质的影响

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy

本研究通过分子束外延生长不同镓掺杂浓度的Bi₂Se₃，证实掺杂可调控其电子性质，2原子百分比镓掺杂下仍存在表面态，为探索拓扑超导提供了可能。

Designing low-cost TaC virtual substrates for $Al_xGa_{1-x}N$ epitaxy

$Al_xGa_{1-x}N$ is a critical ultra-wide bandgap material for optoelectronics, but the deposition of thick, high quality epitaxial layers has been hindered by a lack of lattice-matched substrates. Here we identify the (111) face of transition metal carbides as a suitable class of materials for substrates lattice matched to (0001) $Al_xGa_{1-x}N$ and demonstrate the growth of thin film TaC which has an effective hexagonal lattice constant matched to $Al_{0.45}Ga_{0.55}N$. We explore growth conditions for sputtered TaC on sapphire substrates and investigate the effects of sputter power, layer th…

通过分子束外延控制Si上的Mo/MoS₂混合域以实现析氢反应

Controlling Mixed Mo/MoS$_2$ Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction

通过调节退火温度、沉积周期和Mo/S厚度比，研究了MoS₂薄膜的结构和电子性质，发现缺陷工程化的MoS₂薄膜在析氢反应中表现出优异性能。

Tailoring epitaxial growth and magnetism in La1-xSrxMnO3 / SrTiO3 heterostructures via temperature-driven defect engineering

Among the class of strongly-correlated oxides, La1-xSrxMnO3 $-$ a half metallic ferromagnet with a Curie temperature above room temperature $-$ has sparked a huge interest as a functional building block for memory storage and spintronic applications. In this respect, defect engineering has been in the focus of a long-standing quest for fabricating LSMO thin films with highest quality in terms of both structural and magnetic properties. Here, we discuss the correlation between structural defects, such as oxygen vacancies and impurity islands, and magnetism in La0.74Sr0.26MnO3/SrTiO3 (LSMO/STO) …

Al$_{1-x}$Sc$_{x}$N纳米线的分子束外延：迈向具有增强响应的III族氮化物压电纳米发电机

Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response

本研究通过分子束外延制备Al$_{1-x}$Sc$_{x}$N纳米线，将其集成到压电纳米发电机中，实现比体相AlN更高的压电响应，并通过有效介质建模提出高效能量收集器的设计原理。