Schmid跃迁时transmon的临界荧光
Critical fluorescence of a transmon at the Schmid transition
摘要：
研究了微波光子与高阻电路中的transmon量子比特的非弹性散射。当阻抗达到临界值时，transmon经历电荷局域化（Schmid）转变。由于独特的transmon能级结构，荧光光谱带有跃迁点的特征。在较高的电路阻抗，准弹性光子散射的非弹性散射截面的主要部分，我们发现它依赖于量子比特和电路参数。
英文摘要：
We investigate inelastic microwave photon scattering by a transmon qubit embedded in a high-impedance circuit. The transmon undergoes a charge-localization (Schmid) transition upon the impedance reaching the critical value. Due to the unique transmon level structure, the fluorescence spectrum carries a signature of the transition point. At higher circuit impedance, quasielastic photon scattering may account for the main part of the inelastic scattering cross-section; we find its dependence on the qubit and circuit parameters.
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