光通信用低阈值电流1.25 μ mII型GaInAs/GaAsSb W激光器的性能特性
Performance characteristics of low threshold current 1.25-μm type-II GaInAs/GaAsSb W-lasers for optical communications
摘要：
Ⅱ型W激光器对中红外激光二极管的发展做出了重要贡献。在本文中，我们表明，类似的方法可以产生高性能的激光器在光通信波长范围。（GaIn）As/Ga（AsSb）Ⅱ型W结构在GaAs衬底上实现了1255 nm的发光，室温阈值电流密度为200-300 $^{-2}$，100 μ m宽的脉冲输出功率超过1 W，室温附近的特征温度${_0}$ 90 K.光学增益研究表明，在200-300 Acm $^{-2}$下，在15-23 cm $^{-1}$附近具有高模式增益，并且8 ${\pm}$ 3 cm $^{-1}$具有低光学损耗。对自发发射的分析表明，在室温下，高达24%的阈值电流是由于辐射复合，其余电流是由于其他热激活的非辐射过程。所观察到的差分量子效率随温度升高而降低表明，这主要是由于载流子泄漏过程。这些过程的影响进行了讨论，在进一步的设备优化的潜力。我们的研究结果提出了近红外II型激光二极管的优点，并表明其在光通信中的应用的显着潜力。
英文摘要：
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range. (GaIn)As/Ga(AsSb) type-II W structures emitting at 1255 nm have been realised on a GaAs substrate and exhibit low room temperature threshold current densities of 200-300 Acm$^{-2}$, pulsed output powers exceeding 1 W for 100 $μ$m wide stripes, and a characteristic temperature T${_0}$${\approx}$90 K around room temperature. Optical gain studies indicate a high modal gain around 15-23 cm$^{-1}$ at 200-300 Acm$^{-2}$ and low optical losses of 8 ${\pm}$ 3 cm$^{-1}$. Analysis of the spontaneous emission indicates that at room temperature, up to 24% of the threshold current is due to radiative recombination, with the remaining current due to other thermally activated non-radiative processes. The observed decrease in differential quantum efficiency with increasing temperature suggests that this is primarily due to a carrier leakage process. The impact of these processes is discussed in terms of the potential for further device optimisation. Our results present strong figures of merit for near-infrared type-II laser diodes and indicate significant potential for their applications in optical communications.
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