用于高性能电子器件的具有二维半导体油墨的喷墨印刷电路
Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics
摘要：
适用于互补逻辑的空气稳定半导体油墨是制造低功耗印刷集成电路（IC）的关键。具有二维材料的高性能可印刷电子油墨具有实现下一代高性能、低成本印刷数字电子产品的潜力。在这里，我们展示了喷墨印刷的n型二硫化钼（MoS 2）和p型引达省二噻吩-co-苯并噻二唑（IDT-BT）场效应晶体管（FET）的空气稳定性、低电压（< 5 V）操作，估计MoS 2 FET的开关时间为τ ~ 3.3 μs。我们通过设计适用于喷墨印刷n型MoS 2和p型IDT-BT FET互补对的高质量MoS 2和空气稳定IDT-BT油墨来实现这一目标。然后，我们集成的MoS 2和IDT-BT FET实现喷墨印刷互补逻辑反相器的电压增益|Av| ~ 4时，在阻性负载配置和|Av| ~ 1.36互补配置。这些结果代表了迈向无处不在的长期稳定、低成本印刷数字IC的关键一步。
英文摘要：
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of τ ~ 3.3 μs for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
