In recent years there has been a number of proposals of thermal devices operating in the near-field regime that make use of phase-transition materials. Here, we present a theoretical study of near-field thermal diodes and transistors that combine superconducting materials with normal (non-superconducting) metals. To be precise, we show that a system formed by two parallel plates made of Nb and Au can exhibit unprecedented rectification ratios very close to unity at temperatures around Nb superconducting critical temperature and for a wide range of gap size values within the near-field regime. Moreover, we also show that a superconducting Nb layer placed between Au plates can operate as a near-field thermal transistor where the amplification factor can be greatly tuned by varying different parameters such as the temperature and thickness of the Nb layer or the distance between the Nb layer and the Au plates. Overall, our work shows the potential of the use of superconductors for the realization of near-field thermal devices.
Controllable Josephson diode effect, $0$-$π$ transition and switch effect in the superconductor/two-dimensional Weyl nodal line semimetal/superconductor junctions
Prediction of ferroelectric superconductors with reversible superconducting diode effect
非中心对称超导体可以具有超导二极管效应，其中当时间反演对称性也被破坏时，在相反方向上的临界电流是不同的。我们从理论上提出铁电性和超导性共存的铁电超导体可以支持铁电可逆超导二极管效应。通过第一性原理计算，我们预测单层CuNb $_2$ Se $_4$（即，双层NbSe $_2$插入Cu）是这样的铁电超导体，其中铁电性控制层极化以及自旋-轨道耦合引起的自旋分裂的符号。由于临界电流的非互易效应与自旋分裂成正比，因此在铁电性电开关时，超导二极管效应是可逆的。当我们使用CuNb $_2$ Se $_4$作为模型体系时，预测的效应可以出现在一类层间滑动诱导铁电性的二维超导双层膜中。我们的工作为研究二维材料中超导性和铁电性之间的相互作用打开了大门。
Interband-Pairing-Boosted Supercurrent Diode Effect in Multiband Superconductors
Beijing National Laboratory for Condensed Matter Physics（北京凝聚态物理国家实验室）；Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；School of Physics, Beijing Institute of Technology（北京理工大学物理学院）；Kavli Institute for Theoretical Sciences（理论科学卡弗里研究所）；CAS Center for Excellence in Topological Quantum Computation（中国科学院拓扑量子计算卓越创新中心）；New Cornerstone Science Laboratory（新基石科学实验室）
School of Science, Qingdao University of Technology（青岛理工大学理学院）；International Center for Quantum Materials, School of Physics, Peking University（北京大学物理学院量子材料科学中心）；Hefei National Laboratory（合肥国家实验室）
Superconducting diode effect in magnetic superconductors realized by nonreciprocal domain-wall dynamics
Korea Advanced Institute of Science and Technology（韩国科学技术院）；University of Seoul（首尔大学）；Korea Institute for Advanced Study（韩国高等研究院）；University of Illinois at Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）；Texas A&M University（德克萨斯农工大学）；University of Texas at Austin（德克萨斯大学奥斯汀分校）
Measurements of the absolute value of the penetration depth in high-$ T_c$ superconductors using a tunnel diode resonator
提出了一种从谐振器的频移测量伦敦穿透深度的绝对值$λ$的方法。该技术涉及用已知厚度和穿透深度的低Tc材料膜涂覆高$T_c$超导体（HTSC）。用该方法首次测量了YBa 2Cu 3 O {7-δ}（YBCO）Bi 2Sr 2CaCu 2 O {8+δ}（BSCCO）和Pr{1.85}Ce{0.15}CuO{4-δ} $ (PCCO). For YBCO and BSCCO, the values of $ λ（0）$ are in agreement with the literature values. For PCCO $ λ \approx 2790 μ m的伦敦穿透深度。
$ϕ_0$-junction and Josephson diode effect in high-temperature superconductor
Huazhong University of Science and Technology（华中科技大学）；Wuhan National High Magnetic Field Center（武汉国家强磁场中心）；Institute for Quantum Science and Engineering（量子科学与工程研究所）；Hubei Key Laboratory of Gravitation and Quantum Physics（引力与量子物理湖北省重点实验室）
Large superconducting diode effect driven by edge states in twisted iron-chalcogenide Josephson junctions
Tsung-Dao Lee Institute, Shanghai Jiao Tong University（上海交大李政道研究所）；College of Information Science and Electronic Engineering, Zhejiang University（浙江大学信息与电子工程学院）；School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院）；Department of Physics, City University of Hong Kong（香港城市大学物理系）；Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University（上海交通大学张江高等研究院）；Hefei National Laboratory（合肥国家实验室）；New Cornerstone Science Laboratory（新基石科学实验室）
Two-dimensional superconducting diode effect in topological insulator/superconductor heterostructure
The University of Tokyo（东京大学）；RIKEN Center for Emergent Matter Science (CEMS)（理化学研究所 涌现物质科学中心）；Department of Advanced Materials Science, The University of Tokyo（东京大学 先进材料科学系）；Institute for Materials Research (IMR), Tohoku University（东北大学 物质材料研究 Institute）；Institute of Industrial Science, The University of Tokyo（东京大学 工业科学研究所）；Tokyo College, The University of Tokyo（东京大学 东京学院）
