Tuning interfacial thermal conductance has been a key task for the thermal management of nanoelectronic devices. Here, it is studied how the interfacial thermal conductance is great influenced by modulating the mass distribution of the interlayer of one-dimensional atomic chain. By nonequilibrium Green's function and machine learning algorithm, the maximum/minimum value of thermal conductance and its corresponding mass distribution are calculated. Interestingly, the mass distribution corresponding to the maximum thermal conductance is not a simple function, such as linear and exponential distribution predicted in previous works, it is similar to a sinusoidal curve around linear distribution for larger thickness interlayer. Further, the mechanism of the abnormal results is explained by analyzing the phonon transmission spectra and density of states. The work provides deep insight into optimizing and designing interfacial thermal conductance by modulating mass distribution of interlayer atoms.
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.
The interfacial structure plays a critical role in modern optoelectronics. Currently multilayer electrodes are used to optimize the injection and lifetime properties. The choice of interlayer is not universal, with different effects for the same material with different capping metals. Using a novel in-situ characterization method with X-ray photoelectron spectroscopy, the organic/inorganic interface in OLEDs was examined for two common cathode metals with a LiF interlayer. The impact of the interfacial layer on the performance of devices can be attributed to the bulk lattice matching of the in…
Interfacial thermal transport in Si/SiC and SiC/diamond heterostructures: effects of amorphous interlayers and SiC polytypes
K. N. Toosi University of Technology（K.N.托辛理工大学）；Institute for Research in Fundamental Sciences（基础科学研究所）；Imam Khomeini International University（伊玛目霍梅尼国际大学）
Spin-orbit torques due to interfacial Rashba and spin Hall effects have been widely considered as a potentially more efficient approach than the conventional spin-transfer torque to control the magnetization of ferromagnets. We report a comprehensive study of spin-orbit torque efficiency in Ta(O)/Ni81Fe19 bilayers by tuning low-oxidation of \b{eta}-phase tantalum, and find that the spin Hall angle θDL increases from ~ -0.18 of the pure Ta/Py to the maximum value ~ -0.30 of Ta(O)/Py with 7.8% oxidation. Furthermore, we distinguish the efficiency of the spin-orbit torque generated by the bulk sp…
Interfacial Dzyaloshinskii-Moriya interaction (iDMI) in interlayer exchange coupled (IEC) Pt/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm)/Ru/Co$_{20}$Fe$_{60}$B$_{20}$(1.12 nm) systems have been studied theoretically and experimentally. Vibrating sample magnetometer has been used to measure their magnetization at saturation and their interlayer exchange coupling constants. These latter are found to be of an antiferromagnetic nature for the investigated Ru range thickness (0.5-1 nm). Their dynamic magnetic properties were studied using Brillouin light scattering (BLS) technique. The BLS measurements rev…
Studies to date on ferromagnet/d-wave superconductor heterostructures focus mainly on the effects at or near the interfaces while the response of bulk properties to heterostructuring is overlooked. Here we use resonant soft x-ray scattering spectroscopy to reveal a novel c-axis ferromagnetic coupling between the in-plane Cu spins in YBa$_2$ Cu$_3$ O$_{7-x}$ (YBCO) superconductor when it is grown on top of ferromagnetic La$_{0.7}$ Ca$_{0.3}$ MnO$_3$ (LCMO) manganite layer. This coupling, present in both normal and superconducting states of YBCO, is sensitive to the interfacial termination such …
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based HEMTs are limited by the high channel temperature induced by Joule-heating in the device channel. High thermal conductivity substrates integrated with GaN can improve the extraction of heat from GaN based HEMTs and lower the device operating temperature. However, heterogeneous integration of GaN with diamond substrates is not trivia…
Tuning Cu/Diamond Interfacial Thermal Conductance via Nitrogen-Termination Engineering
Beijing Huairou Laboratory（北京怀柔实验室）；China Southern Power Grid Novel Electric Power System (BEIJING) Research Institute Co., Ltd（中国南方电网新型电力系统（北京）研究院有限公司）
Complex polar superstructure controlled thermal conductivity in ferroelectric PbTiO3/SrTiO3 superlattices
Universidade de Santiago de Compostela（圣地亚哥-德孔波斯特拉大学）；Universidad Rey Juan Carlos（胡安卡洛斯国王大学）；Universitat de Barcelona（巴塞罗那大学）；Catalan Institute of Nanoscience and Nanotechnology (ICN2)（加泰罗尼亚纳米科学与技术研究所）；ALBA Synchrotron Light Facility（阿尔巴同步辐射光源设施）
