基于过渡金属碲化物的点接触中的可切换畴
Switchable domains in point contacts based on transition metal tellurides
摘要：
我们报告了基于一系列范德华过渡金属碲化物（TMT）如MeTe 2（Me=Mo，W）和TaMeTe 4（Me= Ru，Rh，Ir）的电压偏置点接触（PC）中的电阻开关。通过施加一定的偏置电压（<1V），在作为基态的低阻“金属型”状态和高阻“整流型”状态之间发生切换，而通过施加相反极性的电压发生反向切换。这种效应的起因可能是当施加一个强的电场（约10 kV/cm）改变晶体结构并控制其极化时，在PC芯中通过施加偏压而形成畴。除了在PC中发现开关效应之外，我们还提出了一种在功能化之前进行材料测试的简单方法，这在寻找合适的新物质方面提供了很大的优势。所研究的TMT的新功能性产生于亚微米异质结构中的可切换域，这是有前途的，例如，用于非易失性电阻式随机存取存储器（RRAM）工程。
英文摘要：
We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering.
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