双栅MoTe_2光电流载流子倍增
Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2
摘要：
虽然范德华层状过渡金属二硫属化物从瞬态吸收光谱已经成功地证明了一个理想的载流子倍增（CM）的性能与近2 Eg的开始，解释CM效应从光学方法仍然没有解决，由于多体电子空穴对的复杂性。通过在透明衬底上制备双栅pn结的MoTe 2薄膜，我们通过简单的光电流测量证明了CM效应。通过消除金属接触中的肖特基势垒和最小化多次反射，有效地提取了电子和空穴。光电流的增加与激发能成正比。提高的量子效率证实了> 2 Eg的多电子-空穴对产生，与来自光学方法的CM结果一致，将太阳能电池效率推到Shockley-Queisser极限之外。
英文摘要：
Although van der Waals layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2Eg,interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the CM effect through simple photocurrent measurements by fabricating the dual-gate P-N junction of a MoTe2 film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2Eg, consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
