$\require{mhchem}$失配相$\ce{(BiSe)_{$ 1.10 $}NbSe2}$作为掺铌硒化铋中超导性的起源
$\require{mhchem}$Misfit phase $\ce{(BiSe)_{$1.10$}NbSe2}$ as the origin of superconductivity in nobium-doped bismuth selenide
摘要：
$\require{mhchem}$拓扑超导电性是当前非常感兴趣的，并且已经在掺杂的$\ce{Bi2Se3}$中提出，其中诸如Cu、Sr或Nb的给电子原子已经插入到$\ce{Bi2Se3}$结构中。对于$\ce{Nb_{x}Bi2Se3}$，使用$\text{T}_\text{c} \sim 3 \ \text{K}$，在文献中假设Nb插入范德华能隙中。然而，在这项工作中，在Nb掺杂的$\ce{Bi2Se3}$的超导电性的替代起源建立。与以前的报道相比，推断Nb在$\ce{Bi2Se3}$中没有嵌入。相反，标称组成$\ce{Nb_{x}Bi2Se3}$的样品中的超导行为是由$\ce{(BiSe)_{$ 1.10 $}NbSe2}$失配相引起的，该失配相作为小$x$（$0.01 \leq x \leq 0.10$）的杂质相和作为大$x$（$x = 0.50$）的主相存在于样品中。使用X射线衍射和透射电子显微镜技术相结合，详细研究了这种失配相的结构。
英文摘要：
$\require{mhchem}$Topological superconductivity is of great contemporary interest and has been proposed in doped $\ce{Bi2Se3}$ in which electron-donating atoms such as Cu, Sr or Nb have been intercalated into the $\ce{Bi2Se3}$ structure. For $\ce{Nb_{x}Bi2Se3}$, with $\text{T}_\text{c} \sim 3 \ \text{K}$, it is assumed in the literature that Nb is inserted in the van der Waals gap. However, in this work an alternative origin for the superconductivity in Nb-doped $\ce{Bi2Se3}$ is established. In contrast to previous reports, it is deduced that Nb intercalation in $\ce{Bi2Se3}$ does not take place. Instead, the superconducting behaviour in samples of nominal composition $\ce{Nb_{x}Bi2Se3}$ results from the $\ce{(BiSe)_{$1.10$}NbSe2}$ misfit phase that is present in the sample as an impurity phase for small $x$ ($0.01 \leq x \leq 0.10$) and as a main phase for large $x$ ($x = 0.50$). The structure of this misfit phase is studied in detail using a combination of X-ray diffraction and transmission electron microscopy techniques.
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