金属交换催化分子束外延（MEXCAT-MBE）在（100）$β$ - Ga2O3同质外延过程中与截断相关的阶跃流和生长速率增强
Offcut-related step-flow and growth rate enhancement during (100) $β$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
摘要：
在这项工作中，我们研究了$β$ -Ga 2 O 3同质外延层的生长（100）取向的衬底上通过铟辅助金属交换催化分子束外延（MEXCAT-MBE），在过去的非催化分子束外延表现出令人望而却步的低增长率。我们证明，适当调整MEXCAT生长参数和选择适当的衬底切边允许通过分步流动生长机制以相对高的生长速率沉积具有高结构质量的薄膜，用于$β$ -Ga 2 O 3同质外延（即，约1.5 nm/min，引入的Ga助熔剂的$\approx$ 45%结合），使得在该取向上的MBE生长可行。此外，通过采用沿着[00-1]方向的四种不同的（100）衬底切边（即，0 $^\circ$，2 $^\circ$，4 $^\circ$，6 $^\circ$），我们给出了（-201）台阶边作为成核点对MBE生长（100）取向Ga_2 O_3薄膜的基本作用的实验证据。
英文摘要：
In this work we investigate the growth of $β$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth rates by non-catalyzed MBE in the past. We demonstrate that the proper tuning of the MEXCAT growth parameters and the choice of a proper substrate offcut allow for the deposition of thin films with high structural quality via step-flow growth mechanism at relatively high growth rates for $β$-Ga2O3 homoepitaxy (i.e., around 1.5 nm/min, $\approx$45% incorporation of the incoming Ga flux), making MBE growth on this orientation feasible. Moreover, through the employment of the investigated four different (100) substrate offcuts along the [00-1] direction (i.e., 0$^\circ$, 2$^\circ$, 4$^\circ$, 6$^\circ$) we give experimental evidence on the fundamental role of the (-201) step edges as nucleation sites for growth of (100)-oriented Ga2O3 films by MBE.
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