基于串联水平隧道结的级联电子源
A Cascade Electron Source Based on Series Horizontal Tunneling Junctions
摘要：
片上电子源在微型真空电子器件中有着广泛的应用前景，其发射效率是衡量其性能的重要指标之一。提出了一种基于串联金属-绝缘体-金属水平隧穿结的级联电子源，其中自由电子从每个隧穿结中相加地提取。具有n个水平隧道结的级联电子源的理论发射效率约为η（n）=1-（1-η_0）^n，其中η_0为单个隧道结的效率。在实验上，采用三个Si-SiOx-Si隧穿结级联电子源，发射效率高达47.6%。该工作为实现高效率的片上电子源提供了一种新的途径。
英文摘要：
On-chip electron sources have wide potential applications in miniature vacuum electronic devices and emission efficiency is one of their performance benchmarks. A cascade electron source based on series metal-insulator-metal horizontal tunneling junctions is proposed, where free electrons are additively extracted from each tunneling junction. A cascade electron source with n horizontal tunneling junctions shows a theoretical emission efficiency of approximately η(n)=1-(1-η_0 )^n, with η_0 being the efficiency of a single tunneling junction. Experimentally, a cascade electron source with three Si-SiOx-Si tunneling junctions is demonstrated, achieving an emission efficiency as high as 47.6%. This work provides a new way of realizing highly efficient on-chip electron sources.
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