倒置GaN发光二极管的等离子体增强发射
Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
摘要：
银纳米粒子分散在一个倒置的GAN LED的表面上被发现等离子体增强近带边发射。共振表面等离子体激元耦合导致激子衰减速率的显著增强，并且纳米颗粒的集合提供了一种将耦合能量散射为自由空间辐射的机制。倒置LED结构采用隧道结以避免标准厚p+ GAN电流扩展接触层。与标准设计相比，顶部接触是一个薄的n++ AlGaN层，它将量子阱带入银纳米颗粒的边缘场。这种接近允许在量子阱内诱导的激子耦合到表面等离子体，这又导致来自LED的增强的带边发射。
英文摘要：
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.
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