纳米孔缺陷及其几何排列对原子级薄铟超导体单晶超流密度的影响
Influence of nano-hole defects and their geometric arrangements on the superfluid density in atomically thin single crystals of indium superconductor
摘要：
以Si（111）衬底上的铟（Indium on Si）为原子级薄超导体平台，通过系统地控制纳米孔洞缺陷（纳米尺寸空洞）的密度，揭示了缺陷密度和缺陷几何排列对宏观和微观尺度上超导性的影响.当纳米孔缺陷均匀地分散在原子层中时，超流密度作为缺陷密度的函数（从表面积的0.7%至5%）单调地减小，在转变温度Tc中具有微小的变化，微观和宏观上测量。随着缺陷密度从5%到6%的略微增加，这些点缺陷被组织成包含单个二维补丁的缺陷链。这种新的缺陷几何排列对超导性产生了巨大的影响，导致宏观超流密度的完全消失和微观超导能隙的崩塌。这项研究为理解局部缺陷及其几何排列如何影响二维极限中的超导性提供了新的思路。
英文摘要：
Using Indium on Si(111) as an atomically thin superconductor platform, and by systematically controlling the density of nano-hole defects (nanometer size voids), we reveal the impacts of defects density and defects geometric arrangements on superconductivity at macroscopic and microscopic length scales. When nano-hole defects are uniformly dispersed in the atomic layer, the superfluid density monotonically decreases as a function of defect density (from 0.7% to 5% of the surface area) with minor change in the transition temperature Tc, measured both microscopically and macroscopically. With a slight increase in the defect density from 5% to 6%, these point defects are organized into defect chains that enclose individual two-dimensional patches. This new geometric arrangement of defects dramatically impacts the superconductivity, leading to the total disappearance of macroscopic superfluid density and the collapse of the microscopic superconducting gap. This study sheds new light on the understanding of how local defects and their geometric arrangement impact superconductivity in the two-dimensional limit.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
